US 12,598,814 B2 · Lateral diodes in stacked transistor technologies

Abstract

Integrated circuits including lateral diodes. In an example, diodes are formed with laterally neighboring source and drain regions (diffusion regions) configured with different polarity epitaxial growths (e.g., p-type and n-type), to provide an anode and cathode of the diode. In some such cases, dopants may be used in the channel region to create or otherwise enhance a PN or PIN junction between the diffusion regions and the semiconductor material of a channel region. The channel region can be, for instance, one or more nanoribbons or other such semiconductor bodies that extend between the oppositely-doped diffusion regions. In some cases, nanoribbons making up the channel region are left unreleased, thereby preserving greater volume through which diode current can flow. Other features include skipped epitaxial regions, elongated gate structures, using isolation structures in place of gate structures, and/or sub-fin conduction paths that are supplemental or alternative to a channel-based conduction path.

Claims25

Dependent claims

An integrated circuit comprising:

a first diffusion region comprising a p-type dopant;
a second diffusion region comprising a n-type dopant;
a first semiconductor body extending laterally from the first diffusion region to the second diffusion region;
a third diffusion region aligned directly below or aligned directly above the first diffusion region, the third diffusion region comprising one of the p-type dopant or the n-type dopant;
a fourth diffusion region aligned directly below or aligned directly above the second diffusion region, the fourth diffusion region comprising the same dopant type as the third diffusion region;
and
a second semiconductor body extending laterally between the third diffusion region and the fourth diffusion region.

4 more elements

Dependencies are inferred from the claim text.

Lateral diodes in stacked transistor technologies

Life of this patent

Lateral diodes in stacked transistor technologies

Life of this patent

Abstract

Claims25