TVS with enhanced repetitive surge performance
AssigneeLittelfuse Semiconductor (Wuxi) Co., Ltd.
InventorsLei Shi, Jifeng Zhou, Xingchong Gu
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Abstract
A transient voltage suppression (TVS) device. The TVS device may include a substrate, comprising a polarity of a first type. The TVS device may further include a first dopant layer, disposed on a first surface of the substrate, the first layer comprising a polarity of a second type, wherein the first dopant layer forms a P/N junction with the substrate. The TVS device may include a first buffer layer, disposed on the first dopant layer, and a first outer contact layer, disposed on the first buffer layer.
Claims8
A transient voltage suppression (TVS) device, comprising:
- a substrate, comprising a polarity of a first type;
- a first dopant layer, disposed on a first surface of the substrate, the first dopant layer comprising a polarity of a second type, wherein the first dopant layer forms a P/N junction with the substrate;
- a first buffer layer, disposed on the first dopant layer;
- a first outer contact layer, disposed on the first buffer layer;
- and
- an isolation structure, the isolation structure extending around a periphery of the first dopant layer, and into a region of the substrate having the polarity of the first type, wherein the isolation structure comprises an oxide glass layer, disposed on an outer surface of the isolation structure.
A bidirectional transient voltage suppression (TVS) device, comprising:
- a substrate, comprising a polarity of a first type;
- a first dopant layer, disposed on a first surface of the substrate, the first dopant layer comprising a polarity of a second type, wherein the first dopant layer forms a P/N junction with the substrate;
- a first buffer layer, disposed on the first dopant layer;
- a first outer contact layer, disposed on the first buffer layer;
- a second dopant layer, disposed on a second surface of the substrate, opposite to the first surface, the second dopant layer comprising the polarity of the second type;
- a second buffer layer, disposed on the second dopant layer;
- and
- a second outer contact layer, disposed on the second buffer layer.
Dependencies are inferred from the claim text.