Integrated circuit device

An integrated circuit device comprising:

• a pair of fin-type active regions, which extend in a first horizontal direction on a substrate;
• a fin isolation insulator between ones of the pair of fin-type active regions, and extends in a second horizontal direction that intersects with the first horizontal direction;
• a pair of nanosheet stacks on respective ones of the pair of fin-type active regions, wherein each of the pair of nanosheet stacks comprises at least one nanosheet;
• a pair of gate lines on the respective ones of the pair of fin-type active regions, wherein the pair of gate lines extend around the at least one nanosheet in a plan view and extend in the second horizontal direction;
• and
• a pair of source/drain regions respectively on opposing sides of the fin isolation insulator between the pair of gate lines,
• wherein the fin isolation insulator comprises:
• a first nitrogen-rich barrier film comprising a first local region that has at least one protrusion facing at least one of the pair of source/drain regions;
• and
• a second nitrogen-rich barrier film, which is spaced apart from the first nitrogen-rich barrier film and is in a space defined by the first nitrogen-rich barrier film.

An integrated circuit device comprising:

• a first fin-type active region and a second fin-type active region, which extend in a first horizontal direction on a substrate;
• a fin isolation insulator between the first fin-type active region and the second fin-type active region, wherein the fin isolation insulator extends in a second horizontal direction that intersects with the first horizontal direction;
• at least one nanosheet on the first fin-type active region;
• a gate line on the first fin-type active region, wherein the gate line extends around the at least one nanosheet in a plan view and extends in the second horizontal direction;
• and
• a source/drain region on the first fin-type active region between the gate line and the fin isolation insulator,
• wherein the fin isolation insulator comprises a first nitrogen-rich barrier film, a first isolation insulating film, a second nitrogen-rich barrier film, and a second isolation insulating film, which are sequentially stacked from an outermost portion of the fin isolation insulator toward a central portion of the fin isolation insulator,
• wherein the first nitrogen-rich barrier film has at least one protrusion in a local region thereof facing the source/drain region, and
• wherein the second nitrogen-rich barrier film is spaced apart from the first nitrogen-rich barrier film with the first isolation insulating film therebetween, and has a smooth surface facing the local region of the first nitrogen-rich barrier film.