US 12,598,801 B2 · Semiconductor device of physical unclonable function and manufacturing method thereof

Abstract

A semiconductor device includes a first transistor cell. The first transistor cell generates a first current signal and a second current signal indicating a bit of a physical unclonable function. The first transistor cell includes a first transistor, a second transistor and a third transistor. The first transistor outputs the first current signal. The second transistor generates the first current signal from a first source/drain structure of the second transistor, and generates the second current signal from a second source/drain structure of the second transistor. The third transistor outputs the second current signal. The first transistor, the second transistor and the third transistor are stacked in order along a first direction. The first source/drain structure of the second transistor and the second source/drain structure of the second transistor are arranged along a second direction different from the first direction.

Claims20

Dependent claims

A semiconductor device, comprising a first transistor cell configured to generate a first current signal and a second current signal indicating a bit of a physical unclonable function, the first transistor cell comprising:

a first transistor configured to output the first current signal;
a second transistor configured to generate the first current signal from a first source/drain structure of the second transistor, and generate the second current signal from a second source/drain structure of the second transistor;
a third transistor configured to output the second current signal,
wherein the first transistor, the second transistor and the third transistor are stacked in order along a first direction, and
the first source/drain structure of the second transistor and the second source/drain structure of the second transistor are arranged along a second direction different from the first direction;
and
a first via extending along the first direction to couple a gate structure of the first transistor to a gate structure of the third transistor.

4 more elements

A semiconductor device, comprising:

a first source/drain structure;
a second source/drain structure contacting with the first source/drain structure to form a first boundary, and configured to generate a first current signal flowing through the first boundary according to a voltage signal;
a third source/drain structure configured to generate a second current signal according to the voltage signal;
a comparator configured to compare the first current signal and the second current signal to generate a bit of a physical unclonable function;
a first bit line configured to receive the first current signal;
and
a second bit line configured to receive the second current signal,
wherein the second source/drain structure and the third source/drain structure correspond to two terminals of a first transistor, respectively,
the first source/drain structure and the second source/drain structure are arranged in order along a first direction,
the second source/drain structure and the third source/drain structure are arranged in order along a second direction different from the first direction, and
the first transistor is formed between the first bit line and the second bit line.

8 more elements

A method, comprising:

forming a first transistor stacked on a second transistor along a first direction;
and
forming a third transistor stacked on the first transistor along the first direction,
wherein the first transistor is configured to generate a first current signal and a second current signal indicating a bit of a physical unclonable function,
the first current signal flows from a first terminal of the first transistor through the second transistor to a first bit line,
the second current signal flows from a second terminal of the first transistor through the third transistor to a second bit line,
each of the first transistor, the second transistor and the third transistor is formed between the first bit line and the second bit line, and
each of the first bit line and the second bit line extends along a second direction different from the first direction.

5 more elements

Dependencies are inferred from the claim text.

Semiconductor device of physical unclonable function and manufacturing method thereof

Life of this patent

Semiconductor device of physical unclonable function and manufacturing method thereof

Life of this patent

Abstract

Claims20