Semiconductor devices and method of forming the same
AssigneeTaiwan Semiconductor Mnaufacturing Company, Ltd.
InventorsYu-Ting Hsiao, Min-Hsiu Hung, Wei-Jung Lin, Chih-Wei Chang, Ming-Hsing Tsai
Life of this patent
Estimating the term…
Abstract
A method of forming a semiconductor device includes the following steps. A first layer is provided, wherein a material of the first layer is amorphous or single crystal. A first conductive layer is directly deposited on the first layer, wherein the first conductive layer is in direct contact with the first layer, and a cross-sectional area of a grain of a material of the first conductive layer is larger than 500 nm2.
Claims20
A method of forming a semiconductor device, comprising:
- providing a first layer, wherein a material of the first layer is amorphous or single crystal;
- directly depositing a first conductive layer on the first layer, wherein the first conductive layer is in direct contact with the first layer, and a cross-sectional area of a grain of a material of the first conductive layer is larger than 500 nm2;
- and
- removing portions of the first layer and the first conductive layer, wherein the first layer surrounds sidewalls of the first conductive layer.
A method of forming a semiconductor device, comprising:
- forming a silicide layer in an opening of a dielectric layer;
- forming a first conductive layer on the silicide layer, wherein the first conductive layer is in direct contact with the silicide layer, and a cross-sectional area of a grain of a material of the first conductive layer is larger than 500 nm2;
- removing portions of the silicide layer and the first conductive layer, wherein the first layer surrounds sidewalls of the first conductive layer;
- and
- forming a second conductive layer on the first conductive layer to fill the opening.
A method of forming a semiconductor device, comprising:
- forming a silicide layer on a source/drain region;
- forming a first conductive layer on the silicide layer, wherein a cross-sectional area of a grain of a material of the first conductive layer is larger than 500 nm2;
- removing portions of the silicide layer and the first conductive layer, wherein the first layer surrounds sidewalls of the first conductive layer;
- and
- forming a first contact on the first conductive layer.
Dependencies are inferred from the claim text.