Storage device, method for manufacturing the same, and electronic apparatus including storage device

A method for manufacturing a storage device, comprising:

• providing a plurality of strips on a substrate such that the plurality of strips are spaced apart from each other in a first direction and continuously extend in a second direction in a zigzag shape, wherein each of the strips comprises a first source/drain layer, a channel layer and a second source/drain layer that are stacked sequentially in a vertical direction, the first direction and the second direction intersect, and each of the strips comprises a first segment extending in a third direction between the first direction and the second direction, and a second segment alternately provided with the first segment in the second direction;
• defining active regions of a plurality of storage units through the plurality of strips respectively, wherein each of the active regions comprises a vertical stack of a first source/drain layer, a channel layer, and a second source/drain layer at a position of the first segment corresponding to the active region;
• a channel layer and a second source/drain layer in each vertical stack are discontinuous from a channel layer and a second source/drain layer in another vertical stack, and the first source/drain layers of the active regions defined through a same strip continuously extend to form a respective bit line;
• and vertical stacks defined through different strips are arranged in a row along the first direction, and vertical stacks defined through a same strip are arranged in a column along the second direction;
• forming a gate stack in each of the storage units disposed between the first source/drain layer and the second source/drain layer in the vertical direction and sandwiching the channel layer from at least two opposite sides of the channel layer;
• and
• forming a plurality of word lines extending in the first direction on the substrate, wherein each of the word lines extends in the first direction to intersect the active regions of a respective row, and is electrically connected to the gate stacks of the storage units corresponding to the word line.