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US 12,598,789 B2Granted
Self-aligned backside contact
AssigneeInternational Business Machines Corporation
InventorsTao Li, Ruilong Xie, Shogo Mochizuki, Nicolas Jean Loubet
Life of this patent
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Abstract
A semiconductor structure including a first transistor including a first placeholder and a first gate pitch and a second transistor including a second placeholder and a second gate pitch, where the first gate pitch is less than the second gate pitch, and wherein the first placeholder is smaller than the second placeholder.
Claims20
A semiconductor structure comprising:
- a first transistor comprising a first placeholder and a first gate pitch, wherein at least a first portion of the first placeholder extends above a topmost surface of a backside dielectric layer;
- and
- a second transistor comprising a second placeholder and a second gate pitch, wherein at least a first portion of the second placeholder extends above the topmost surface of the backside dielectric layer, and
- wherein the first gate pitch is less than the second gate pitch, and wherein the first placeholder is smaller than the second placeholder.
1 more element
A semiconductor structure comprising:
- a first array of nanosheet transistors comprising first placeholders;
- and
- a second array of nanosheet transistors comprising second placeholders;
- wherein a first gate pitch of the first array of nanosheet transistors is less than a second gate pitch of the second array of nanosheet transistors, and
- wherein a bottommost surface of each of the second placeholders is below a bottommost surface of each of the first placeholders.
2 more elements
A semiconductor structure comprising:
- a first array of nanosheet transistors comprising first placeholders adjacent to first backside source drain contacts, wherein the first array of nanosheet transistors comprises a first gate pitch;
- and
- a second array of nanosheet transistors second placeholders adjacent to second backside source drain contacts, wherein the second array of nanosheet transistors comprises a second gate pitch;
- wherein the first gate pitch is less than the second gate pitch, and
- wherein a bottommost surface of each of the second placeholders is below a bottommost surface of each of the first placeholders.
2 more elements
Dependencies are inferred from the claim text.