US 12,598,788 B2 · Method to form silicon-germanium nanosheet structures

Abstract

A semiconductor device includes a tier of transistors and devices. Each transistor includes a respective channel structure including a first epitaxially grown semiconductor material, a respective shell structure all around a respective middle portion of the respective channel structure, a respective gate structure all around the respective shell structure, and respective source/drain (S/D) structures on respective opposing ends of the respective channel structure. The respective middle portion of each channel structure has a smaller circumference than the respective opposing ends of each channel structure when viewed from a respective current direction in the channel structure. The respective shell structure is formed of a semiconductor material having lattice mismatch with the first epitaxially grown semiconductor material.

Claims21

Dependent claims

A method of manufacturing a semiconductor device, the method comprising:

forming a stack of epitaxially grown layers alternating between a first semiconductor material and a second semiconductor material that is etch selective to the first semiconductor material;
forming fin structures from the stack, the fin structures including channel structures formed of the first semiconductor material;
shrinking cross-sections of the channel structures;
and
after the shrinking the cross-sections of the channel structures, forming a third semiconductor material 360 degrees all around the channel structures, wherein the third semiconductor material has lattice mismatch with the first semiconductor material.

2 more elements

A semiconductor device, comprising:

a tier of transistors and devices, wherein each transistor comprises:
a respective channel structure comprising a first epitaxially grown semiconductor material,
a respective shell structure 360 degrees all around a respective middle portion of the respective channel structure,
a respective gate structure 360 degrees all around the respective shell structure, and respective source/drain (S/D) structures on respective opposing ends of the respective channel structure,
wherein the respective middle portion of each channel structure has a smaller circumference than the respective opposing ends of each channel structure when viewed from a respective current direction in each channel structure,
wherein the respective shell structure is formed of a semiconductor material having lattice mismatch with the first epitaxially grown semiconductor material.

3 more elements

Dependencies are inferred from the claim text.

Method to form silicon-germanium nanosheet structures

Life of this patent

Method to form silicon-germanium nanosheet structures

Life of this patent

Abstract

Claims21