Super-junction MOSFET/IGBT with MEMS layer transfer and WBG drain

A method of making a semiconductor device, comprising:

• providing a substrate;
• disposing a first semiconductor layer comprising a first semiconductor material over the substrate by,
• (a) forming a sacrificial layer comprising the first semiconductor material over the substrate, and
• (b) forming the first semiconductor layer over the sacrificial layer with defects being formed in the sacrificial layer leaving the first semiconductor layer as substantially defect-free;
• removing the sacrificial layer leaving the first semiconductor layer as substantially defect-free;
• and
• disposing a second semiconductor layer comprising a second semiconductor material over the first semiconductor layer being substantially defect-free, wherein an electrical component is formed in the second semiconductor layer by,
• (c) forming a trench through the second semiconductor layer and extending into the first semiconductor layer,
• (d) forming a first column of semiconductor material having a first conductivity type and extending through the second semiconductor layer,
• (e) forming a second column of semiconductor material having a second conductivity type opposite the first conductivity type and in contact with the first column of semiconductor material,
• (f) forming a source region over the first column of semiconductor material, and
• (g) disposing at least one structure formed by micro-electro-mechanical systems (MEMS) layer transfer within the trench.

A method of making a semiconductor device, comprising:

• providing a substrate;
• disposing a first semiconductor layer over the substrate by,
• (a) forming a sacrificial layer comprising a first semiconductor material over the substrate, and
• (b) forming the first semiconductor layer over the sacrificial layer with defects being formed in the sacrificial layer leaving the first semiconductor layer as substantially defect-free;
• removing the sacrificial layer leaving the first semiconductor layer as substantially defect-free;
• and
• disposing a second semiconductor layer over the first semiconductor layer being substantially defect-free, wherein an electrical component is formed in the second semiconductor layer by,
• (c) forming a trench through the second semiconductor layer and extending into the first semiconductor layer,
• (d) forming a first column of semiconductor material having a first conductivity type and extending through the second semiconductor layer,
• (e) forming a second column of semiconductor material having a second conductivity type opposite the first conductivity type and in contact with the first column of semiconductor material,
• (f) forming a source region over the first column of semiconductor material, and
• (g) disposing at least one structure formed by micro-electro-mechanical systems (MEMS) layer transfer within the trench.

A method of making a semiconductor device, comprising:

• providing a substrate including a sacrificial surface;
• disposing a first semiconductor layer comprising a first semiconductor material over the sacrificial surface of the substrate by,
• (a) forming a sacrificial layer comprising the first semiconductor material over the sacrificial surface of the substrate,
• (b) forming a seed layer over the sacrificial layer, and
• (c) forming the first semiconductor layer over the seed layer with defects being formed in the sacrificial surface of the substrate and the sacrificial layer leaving the first semiconductor layer as substantially defect-free;
• removing the sacrificial layer leaving the first semiconductor layer as substantially defect-free;
• and
• disposing a second semiconductor layer comprising a second semiconductor material dissimilar from the first semiconductor material over the first semiconductor layer being substantially defect-free, wherein an electrical component is formed in the second semiconductor layer by,
• (d) forming a trench through the second semiconductor layer and extending into the first semiconductor layer,
• (e) forming a first column of semiconductor material having a first conductivity type and extending through the second semiconductor layer,
• (f) forming a second column of semiconductor material having a second conductivity type opposite the first conductivity type and in contact with the first column of semiconductor material,
• (g) forming a source region over the first column of semiconductor material, and
• (h) disposing at least one structure formed by micro-electro-mechanical systems (MEMS) layer transfer within the trench.