Semiconductor switching device
AssigneeGE Aviation Systems LLC
InventorsCollin William Hitchcock, Stacey J. Kennerly, Ljubisa D. Stevanovic
Life of this patent
Estimating the term…
Abstract
A semiconductor device cell includes a JFET region adjacent a channel region, the JFET region defining a periphery of the semiconductor device cell. The JFET region includes a first corner region and a second corner region separated by a JFET intermediate region. A first width of the JFET intermediate region extending from an edge of the JFET intermediate region abutting a periphery of the channel region to the periphery of the semiconductor device cell is greater than a second width of the JFET region extending from an edge of at least one of the first corner region and the second corner region abutting the periphery of the channel region to the semiconductor cell periphery.
Claims18
A semiconductor device cell comprising:
- a well region having a second conductivity type;
- a source region having a first conductivity type disposed adjacent to and surrounded by the well region,
- a channel region having the second conductivity type, disposed around and adjacent to the well region;
- and
- a JFET region abutting a periphery of the channel region and defining a semiconductor cell periphery, the JFET region having at least a first corner region and a second corner region separated by a JFET intermediate region, wherein a first width of the JFET intermediate region is greater than a second width of the JFET region,
- wherein the first width of the JFET intermediate region extends across the JFET intermediate region from an edge of the JFET intermediate region abutting the periphery of the channel region to the semiconductor cell periphery,
- wherein the second width of the JFET intermediate region extends from an edge of at least one of the first and the second corner regions abutting the periphery of the channel region to the semiconductor cell periphery, and
- wherein a boundary between the well region and the channel region is rectangular.
A system, comprising:
- a plurality of semiconductor device cells, wherein each of the plurality of semiconductor cells comprises:
- a well region having a second conductivity type;
- a source region having a first conductivity type disposed adjacent to and surrounded by the respective well region;
- a channel region having the second conductivity type, disposed around and adjacent to the respective well region;
- and
- a JFET region abutting a periphery of the respective channel region and defining a respective semiconductor cell periphery, the JFET region having at least a first corner region and a second corner region separated by a JFET intermediate region, wherein a first width of the JFET intermediate region is greater than a second width of the JFET region,
- wherein the first width of the JFET intermediate region extends across the JFET intermediate region from an edge of the JFET intermediate region abutting the periphery of the channel region to the semiconductor cell periphery,
- wherein the second width of the JFET intermediate region extends from an edge of at least one of the first and the second corner regions abutting the periphery of the channel region to the semiconductor cell periphery, and
- wherein a boundary between the well region and the channel region is rectangular.
Dependencies are inferred from the claim text.