Semiconductor device, method for manufacturing semiconductor device, and electronic apparatus including the semiconductor device
AssigneeInstitute of Microelectronics, Chinese Academy of Sciences
InventorHuilong Zhu
Life of this patent
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Abstract
The present disclosure provides a semiconductor device, a method for manufacturing the semiconductor device, and electronic equipment including the semiconductor device. According to embodiments, a semiconductor device may include a channel portion, source/drain portions in contact with the channel portion on opposite sides of the channel portion, and a gate stack intersecting the channel portion. The channel portion includes a first part extending in a vertical direction relative to the substrate and a second part extending from the first part in a lateral direction relative to the substrate.
Claims25
A semiconductor device, comprising:
- a channel portion, comprising:
- a first part extending in a vertical direction relative to a substrate;
- and
- a plurality of second parts extending from the first part in a lateral direction relative to the substrate;
- source/drain portions in contact with the channel portion on two opposite sides of the channel portion;
- a gate stack intersecting the channel portion,
- wherein a surface of a first portion of the substrate has a height in the vertical direction less than a height of a surface of a second portion of the substrate other than the first portion of the substrate in the vertical direction, an orthographic projection of the plurality of second parts of the channel portion on the substrate overlaps with the first portion of the substrate,
- a first isolation portion formed on the first portion of the substrate;
- a second isolation portion formed on the second portion of the substrate;
- wherein an orthographic projection of a boundary between the first portion of the substrate and the second portion of the substrate overlaps with the first part of the channel portion.
Dependencies are inferred from the claim text.