Low temperature, high germanium, high boron SiGe:B pEPI with titanium silicide contacts for ultra-low PMOS contact resistivity and thermal stability

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a plurality of nanowires above a sub-fin;
• a gate stack over the plurality of nanowires and the sub-fin;
• and
• epitaxial source or drain structures on opposite ends of the plurality of nanowires, the epitaxial source or drain structures comprising:
• a first PMOS epitaxial (pEPI) region of germanium and boron,
• a second pEPI region of silicon, germanium and boron on the first pEPI region at a contact location, the second pEPI region comprising an atomic percentage of germanium of approximately 60-100% and being approximately 6-10 nm in thickness, and
• a titanium silicide conductive contact material on the second pEPI region.

An integrated circuit structure, comprising:

• a plurality of nanowires above a sub-fin in a PMOS region;
• a gate stack over the plurality of nanowires and the sub-fin;
• and
• epitaxial source or drain structures on opposite ends of the plurality of nanowires, the epitaxial source or drain structures comprising:
• a first PMOS epitaxial (pEPI) region of germanium and boron,
• a second pEPI region of silicon, germanium and boron on the first pEPI region at a contact location, the second pEPI region comprising an atomic percentage of germanium of approximately 60-100% and being approximately 6-10 nm in thickness, and
• a titanium silicide conductive contact material over the second pEPI region.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a PMOS region comprising;
• a plurality of nanowires above a sub-fin;
• a gate stack over the plurality of nanowires and the sub-fin;
• and
• epitaxial source or drain structures on opposite ends of the plurality of nanowires, the epitaxial source or drain structures comprising:
• a first PMOS epitaxial (pEPI) region of germanium and boron,
• a second pEPI region of silicon, germanium and boron on the first pEPI region at a contact location, the second pEPI region comprising an atomic percentage of germanium of approximately 60-100% and being approximately 6-10 nm in thickness, and
• a titanium silicide conductive contact material over the second pEPI region.