Dielectric layers for semiconductor devices and methods of forming the same

A method of manufacturing a semiconductor device comprising:

• forming a first conductive structure in a first dielectric layer;
• performing a nitridation treatment on the first dielectric layer to form a treated region and an untreated region in the first dielectric layer, wherein the treated region has a first thickness in a range from 2 nm to 15 nm from a top surface of the first dielectric layer;
• forming a first etch stop layer on the first dielectric layer;
• forming a second dielectric layer on the first etch stop layer;
• and
• forming a second conductive structure in the second dielectric layer and the first etch stop layer, wherein the second conductive structure is coupled with the first conductive structure.

A method of manufacturing a semiconductor device, the method comprising:

• performing a nitridation treatment on a first dielectric layer to treat an upper region of the first dielectric layer, wherein the upper region has a first thickness in a range from 2 nm to 15 nm from a top surface of the first dielectric layer, wherein after the nitridation treatment, the upper region has a higher concentration of nitrogen than a lower region of the first dielectric layer, and wherein the first dielectric layer has a first conductive feature disposed therein;
• depositing a first etch stop layer on the first dielectric layer;
• depositing a second dielectric layer on the first etch stop layer;
• and
• forming a second conductive feature in the second dielectric layer and the first etch stop layer, wherein the second conductive feature is coupled with the first conductive feature.