Transistor with low leakage currents and manufacturing method thereof
AssigneesEtron Technology, Inc., Invention And Collaboration Laboratory Pte. Ltd.
InventorsChao-Chun Lu, Weng-Dah Ken
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Abstract
A transistor with low leakage currents includes a substrate, a gate, spacers, pad dielectric layers, a source, and a drain. The gate is formed above a gate dielectric layer, wherein the gate dielectric layer has a first dielectric constant. The spacers have a second dielectric constant. The pad dielectric layers are formed under the spacers and having a third dielectric constant. The source and the drain are adjacent to the spacers and in two opposite directions of the gate. The first dielectric constant, the second dielectric constant, and the third dielectric constant are different from each other.
Claims6
A transistor, comprising:
- a substrate with an original surface;
- a gate formed above a gate dielectric layer, wherein the gate dielectric layer directly contacts to the substrate;
- a first region coupled to one side of the gate, the first region comprising a first spacer, a first pad dielectric layer under the first spacer, and a first conductive region;
- and
- a second region coupled to another side of the gate, the second region comprising a second spacer, a second pad dielectric layer under the second spacer, and a second conductive region, wherein the first pad dielectric layer is separated from the second pad dielectric layer by the gate dielectric layer;
- wherein a first thickness of a first portion of the first pad dielectric layer close to the gate dielectric layer is less than a second thickness of a second portion of the first pad dielectric layer close to the first conductive region.
Dependencies are inferred from the claim text.