Semiconductor device and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJungmin Park, Hanjin Lim, Hyungsuk Jung
Life of this patent
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Abstract
A semiconductor device comprising a substrate, lower electrodes vertically extended on the substrate and horizontally spaced apart from each other, a conductive pattern provided on the substrate to conformally cover the lower electrodes, supporting patterns provided to penetrate the conductive pattern and connected to portions of side surfaces of the lower electrodes, and conductive islands disposed on surfaces of the supporting patterns. The conductive islands may be distributed on the surfaces of the supporting patterns to be spaced apart from each other, and the conductive pattern may be spaced apart from and electrically disconnected from the conductive islands.
Claims14
A method of fabricating a semiconductor device, comprising:
- forming an insulating layer on a substrate;
- forming lower electrode contacts on the substrate to penetrate the insulating layer;
- alternatingly stacking sacrificial layers and supporting layers on the insulating layer to form a stack;
- forming lower electrodes to penetrate the stack and to be in contact with the lower electrode contacts;
- patterning the supporting layers to form supporting patterns;
- removing the sacrificial layers to expose the lower electrodes;
- performing a deposition process, in which a metal material is used, on the lower electrodes and the supporting patterns to form a conductive pattern on the lower electrodes;
- forming a dielectric layer to cover the supporting patterns and the conductive pattern;
- and
- forming an upper electrode to cover the dielectric layer,
- wherein the conductive pattern is formed to cover top surfaces and side surfaces of the lower electrodes, which are exposed by the supporting patterns, and to expose the supporting patterns, and
- wherein in the deposition process, a first deposition rate of the metal material deposited on the lower electrodes is faster than a second deposition rate of the metal material deposited on the supporting patterns.
A method of fabricating a semiconductor device, comprising:
- stacking a sacrificial layer and a supporting layer on a substrate;
- forming lower electrodes to penetrate the supporting layer and the sacrificial layer and to be in contact with the substrate;
- patterning the supporting layer to form a supporting pattern;
- removing the sacrificial layer to expose side surfaces of the lower electrodes, which are not in contact with the supporting pattern;
- and
- performing a deposition process, in which a metal material is used, on the lower electrodes and the supporting pattern to form a conductive pattern on top surfaces of the lower electrodes and on the side surfaces of the lower electrodes, which are not in contact with the supporting pattern,
- wherein the conductive pattern is formed to expose a surface of the supporting pattern,
- wherein the deposition process comprises repeating a cycle, and
- wherein a number of the cycles, which are repeated to deposit a single atomic layer of the metal material on the lower electrode, is less than a number of the cycles, which are repeated to deposit a single atomic layer of the metal material on the supporting pattern.
Dependencies are inferred from the claim text.