High-density metal-insulator-metal capacitor integration wth nanosheet stack technology

A metal-insulator-metal capacitor, the metal-insulator-metal capacitor comprising:

• a first electrode metal forming multiple central, vertical portions of the first electrode metal and multiple sets of stacked horizontal portions of the first electrode metal, wherein the multiple central, vertical portions of the first electrode metal extend above a topmost horizontal portion of the multiple sets of stacked horizontal portions of the first electrode metal;
• an insulator material surrounding the first electrode metal and exposing a top surface of each of the central, vertical portions of the first electrode metal;
• a second electrode material surrounding the insulator material, wherein the insulator material comprises a same material as a gate dielectric material covering bottom and sidewall surfaces of the second electrode material;
• a first electrode contact connecting to each of the top surface of the multiple central, vertical portions of the first electrode metal;
• and
• a second electrode contact connecting to a top surface of the second electrode material on either side of each of the multiple central, vertical portions of the first electrode metal.

A method of forming a metal-insulator-metal capacitor with a comb-like structure, the method comprising:

• forming, from a first electrode metal, a central, vertical portion of the first electrode metal and two sets of stacked horizontal portions of the first electrode metal, wherein the central, vertical portion of the first electrode metal extends above a topmost horizontal portion of the two sets of stacked horizontal portions of the first electrode metal;
• depositing an insulator material, the insulator material surrounding the first electrode material and exposing a top surface of the central, vertical portion of the first electrode metal;
• depositing a second electrode material, the second electrode material surrounding the insulator material, wherein the insulator material comprises a same material as a gate dielectric material covering bottom and sidewall surfaces of the second electrode material;
• forming a first electrode contact on a top surface of the central, vertical portion of the first electrode metal;
• and
• forming a second electrode contact to a top surface of the second electrode.