Semiconductor device including dummy pad

A semiconductor device, comprising:

• a first substrate including a device region and an edge region;
• a first insulating structure on the first substrate;
• first metal pads at an uppermost end of the first insulating structure;
• a second insulating structure on the first insulating structure;
• second metal pads at a lowermost end of the second insulating structure;
• a first interconnection structure in the first insulating structure and electrically connected to the first metal pads;
• a second interconnection structure in the second insulating structure and electrically connected to the second metal pads;
• and
• a second guard ring structure extending into the second insulating structure on the edge region,
• wherein ones of the first metal pads are in contact with respective ones of the second metal pads on the device region, and
• a distance from an outer side surface of the second insulating structure to the second guard ring structure ranges from 0 to 15 μm.

A semiconductor device, comprising:

• a first substrate including a device region and an edge region;
• a first insulating structure on the first substrate;
• first metal pads and first dummy pads at an uppermost end of the first insulating structure;
• a second insulating structure on the first insulating structure;
• second metal pads and second dummy pads at a lowermost end of the second insulating structure;
• a first interconnection structure in the first insulating structure, electrically connected to the first metal pads, and electrically isolated from the first dummy pads;
• a second interconnection structure in the second insulating structure, electrically connected to the second metal pads, and electrically isolated from the second dummy pads;
• a second guard ring structure on the edge region extending into the second insulating structure;
• and
• a scattering beam blocking pattern on the edge region and in the first insulating structure and overlapping at least one of the first dummy pads,
• wherein ones of the first metal pads are on the device region and in contact with respective ones of the second metal pads, and
• ones of the first dummy pads are on the edge region and in contact with respective ones of the second dummy pads.