Vertical semiconductor device and method for fabricating the same

A semiconductor device, comprising:

• a lower structure with interconnections;
• a source structure with a first source stack and a second source stack that are spaced apart from each other, the source structure positioned over the lower structure;
• a first alternating stack with a plurality of gate electrodes, the first alternating stack positioned over the first source stack;
• a second alternating stack with a plurality of gate-level dielectric layers at the same level as the gate electrodes, the second alternating stack positioned over the second source stack;
• a line-type supporter between the first alternating stack and the second alternating stack;
• a contact structure penetrating the second alternating stack and the second source stack to be coupled to the interconnections;
• a plurality of gate contact plugs coupled to ends of the gate electrodes;
• and
• a plurality of pillar-type supporters formed between the plurality of gate contact plugs and to be aligned with the plurality of gate contact plugs in a first direction, the plurality of pillar-type supporters penetrating a stepped structure of the ends of the gate electrodes.