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US 12,598,736 B2Granted
Semiconductor structure and manufacturing method thereof
AssigneeChangxin Memory Technologies, Inc.
InventorsJuanjuan Huang, Weiping Bai
Life of this patent
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Abstract
The present disclosure relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a base and a capacitor structure. The base is provided with a capacitive contact structure. The capacitor structure is connected to the capacitive contact structure, and the capacitor structure includes a plurality of capacitor units stacked in a direction vertical to the capacitive contact structure.
Claims20
A semiconductor structure, comprising:
- a base, wherein the base is provided with at least two capacitive contact structures;
- at least two capacitor structures, wherein each capacitor structure is connected to each capacitive contact structure, the capacitor structure comprises a plurality of capacitor units stacked in a direction vertical to the capacitive contact structure;
- and
- a support structure, located between adjacent capacitor structures, wherein the support structure comprises:
- an auxiliary conductive portion and a support portion alternately arranged in a vertical direction perpendicular to the base, the support portion is located between adjacent capacitor units in the direction parallel to the base.
2 more elements
A method of manufacturing a semiconductor structure, comprising:
- providing a base, wherein the base is provided with at least two capacitive contact structures;
- and
- forming at least two capacitor structures and a support structure, wherein each capacitor structure is connected to each capacitive contact structure, the capacitor structure comprises a plurality of capacitor units stacked in a direction vertical to the capacitive contact structure, the support structure is located between adjacent capacitor structures, and the support structure comprises:
- an auxiliary conductive portion and a support portion alternately arranged in a vertical direction perpendicular to the base, the support portion is located between adjacent capacitor units in the direction parallel to the base.
1 more element
Dependencies are inferred from the claim text.