Semiconductor structure, method for forming same and layout structure

A semiconductor structure, at least comprising:

• a semiconductor substrate comprising a first area and a second area arranged in a second direction;
• a T-shaped active pillar located on a surface of the semiconductor substrate, a plurality of T-shaped active pillars being arranged in an array in a first direction and a third direction, wherein each of the T-shaped active pillars comprises a first active pillar and a second active pillar located in the first area and extending in the second direction, and a third active pillar and a fourth active pillar located in the second area and extending in the first direction, and a fifth active pillar located in the second area, and the first active pillar is connected to the third active pillar, and a projection of the first active pillar and the second active pillar jointly on the surface of the semiconductor substrate is a T shape;
• a T-shaped gate structure and a bit line structure located on a surface of part of each of the T-shaped active pillars, wherein a plurality of T-shaped gate structures located in the first direction are interconnected, and the bit line structure formed on part of the fourth active pillar and extends in the third direction;
• and
• a capacitor structure formed on the fifth active pillar;
• wherein a plurality of capacitor structures extending in the second direction, each of the bit line structures and each of the capacitor structures being connected to one corresponding T-shaped gate structure, the first direction, the second direction and the third direction being perpendicular to one another, and the first direction and the second direction being parallel to the surface of the semiconductor substrate.

A semiconductor structure, at least comprising:

• a T-shaped active pillar;
• a T-shaped gate structure arranged on a surface of part of the T-shaped active pillar;
• a bit line structure arranged at one end of the T-shaped active pillar in a first direction, and
• a capacitor structure arranged at one end of the T-shaped active pillar in a second direction,
• wherein the bit line structure extends in a third direction;
• and the first direction, the second direction and the third direction are perpendicular to one another,
• wherein the T-shaped active pillar comprises a channel region with T-shaped, a source region and a drain region, wherein the source region is arranged at one end of the channel region in the first direction and the drain region is arranged at one of the channel region in the second direction, and
• the T-shaped gate structure is arranged on a surface of the channel region;
• the bit line structure is electrically connected with the source region;
• and
• a capacitor structure is electrically connected with the drain region.