Semiconductor structure and method for manufacturing memory

A semiconductor structure comprising a plurality of memory groups provided in rows, each of the memory groups comprising a plurality of memories arranged at intervals along a row direction, wherein for two adjacent ones of the memory groups, the memories in one memory group and the memories in another memory group are staggered;

• wherein each of the memories comprises two memory cell arrays and a bit line structure, and the two memory cell arrays are located at opposite sides of the bit line structure in the row direction;
• and
• wherein the bit line structure extends along a first direction and is electrically connected with transistors in the two memory cell arrays, one end of the bit line structure protrudes from the memory cell arrays and has step surfaces, and the protruding part of the bit line structure is located between adjacent memories in a memory group adjacent to the protruding part;
• and wherein the first direction and the row direction are perpendicular to each other and are located in a same horizontal plane.