Memory device using semiconductor element

A memory device that uses a semiconductor element, in which a page is made up of a plurality of memory cells arranged in a row direction on a substrate, and a plurality of the pages is arranged in a column direction,

• wherein each of the memory cells contained in each of the pages includes:
• a semiconductor base material erected on the substrate in a vertical direction of the substrate or extended on the substrate in a horizontal direction, wherein the semiconductor base material has a longitudinal length having first and second ends,
• a first impurity layer and a second impurity layer provided, respectively, at the first and second ends of the semiconductor base material,
• a first gate insulating layer placed in contact with, or close to, the first impurity layer, partially or entirely surrounding a lateral surface of the semiconductor base material between the first impurity layer and the second impurity layer,
• a second gate insulating layer joined to the first gate insulating layer and placed in contact with, or close to, the second impurity layer, surrounding the lateral surface of the semiconductor base material,
• a first gate conductor layer covering part or all of the first gate insulating layer,
• a second gate conductor layer covering the second gate insulating layer, and
• a channel semiconductor layer included in the semiconductor base material such that the channel semiconductor layer extends in the longitudinal direction of the semiconductor base material across the first and second ends of the semiconductor material, wherein the channel semiconductor layer is formed of a single conductivity type throughout the longitudinal length of the semiconductor base material for storing only one type of carriers throughout the channel semiconductor layer, and further wherein the channel semiconductor layer is covered with the first gate insulating layer and the second gate insulating layer arranged in the longitudinal direction of the semiconductor base material with a space between the first and second gate insulating layers, wherein a portion of the channel semiconductor layer covered by the first gate insulating layer, a portion of the channel semiconductor layer covered by the second gate insulating layer and a remining portion of the channel semiconductor layer located between the first and second gate insulating layers and not covered by the first or second gate insulating layer are all formed of the single conductivity type for storing the only one type of carriers;
• a page write operation and a page erase operation are performed by controlling voltages applied to the first gate conductor layer, the second gate conductor layer, the first impurity layer, and the second impurity layer;
• the first impurity layer of the memory cell is connected with a source line, the second impurity layer is connected with a bit line, one of the first gate conductor layer and the second gate conductor layer is connected with a word line, and another is connected with a drive control line;
• and
• the bit line is connected to a sense amplifier circuit;
• during a page read operation, by controlling voltages applied to the word line, the drive control line, the source line, and the bit line and using the page write operation, page data of a memory cell group selected by the word line is read into a sense amplifier circuit concurrently with a refresh operation of forming positive hole groups by an impact ionization phenomenon in the channel semiconductor layer of the channel semiconductor layer.