# US 12,598,414 B2 · System and method for generating an audio signal > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,598,414 B2 - Document ID: US12598414B2 - Status: Granted - Kind: B2 - Application number: 18/542,851 - Filed: 2023-12-18 - Published: 2024-06-20 - Granted: 2026-04-07 - Earliest claimed: 2022-12-19 - Assignees: Sonicedge Ltd. - Applicants: Sonicedge Ltd. - Inventors: Mordehai Margalit - Web page: https://patentgrep.com/patent/US12598414B2 ## CPC - H04R 1/20: Arrangements for obtaining desired frequency or directional characteristics (for stereophonic purpose H04R5/00) - H04R 19/02: Loudspeakers (H04R19/01 takes precedence) - H04R 1/403: {loud-speakers} - H04R 19/005: {using semiconductor materials} - H04R 2217/03: Parametric transducers where sound is generated or captured by the acoustic demodulation of amplitude modulated ultrasonic waves - H04R: LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS (producing sounds with frequency not determined by supply frequency G10K) ## Abstract Techniques described herein generally relate to generating an audio signal with a speaker device. The speaker device includes a first conductive layer with a plurality of center structures and springs; a second conductive layer with a plurality of perforations; and electrical isolation rings; a third conductive layer with a plurality of center structures and springs; and a dielectric layer. The first, second and third conductive layers are in physical contact with the dielectric layer and are electrically isolated from each other. ## Claims ### Claim 1 A speaker device comprising: a first conductive layer with a plurality of first center structures and first springs coupled to the first center structures; a second conductive layer with a plurality of perforations; and electrical isolation rings; a third conductive layer with a plurality of second center structures and second springs coupled to the second center structures; and a dielectric layer; wherein the first, second and third conductive layers are in physical contact with the dielectric layer and are electrically isolated from each other. ### Claim 2 (depends on 1) The speaker device of claim 1, wherein the second conductive layer is physically connected to the dielectric layer at its perimeter with at least 70 percent of its perimeter and is constructed and arranged to restrict airflow from a bottom side of the second conductive layer to a top side of the second conductive layer to substantially a set of perforations in the second conductive layer. ### Claim 3 (depends on 1) The speaker device of claim 1, wherein the second conductive layer is physically connected to the dielectric layer at its perimeter with any of at least 60 percent; at least 80 percent; at least 90 percent of its perimeter and restricts airflow from a bottom side of the second conductive layer to a top side of the second conductive layer to substantially a set of perforations in the second conductive layer. ### Claim 4 (depends on 1) The speaker device of claim 1, wherein the conductive layers are any of polysilicon; doped polysilicon; Aluminum (Al); Aluminum-Copper alloys (AlCu); Aluminum-Silicon-Copper alloys (AlSiCu); or Nickel (Ni). ### Claim 5 (depends on 1) The speaker device of claim 1 wherein the dielectric layer material is any of silicon mononitride (SiN); silicon-rich nitride (SiRN); titanium nitride (TiN); tantalum oxide (TaO); tantalum nitride (TaN); aluminum oxide (AlOx); or silicon dioxide (SiO2). ### Claim 6 (depends on 1) The speaker device of claim 1, wherein each of the first and second center structures has a radially symmetric shape. ### Claim 7 (depends on 1) The speaker device of claim 1, wherein the first springs and first center structures comprise a first mechanical structure with a mechanical resonant frequency of one of: less than 200 KHz; 200-300 KHz; 300-400 KHz; above 400 KHz; above 600 KHz; or above 1 MHz. ### Claim 8 (depends on 1) The speaker device of claim 1, wherein the second springs and second center structures comprise a second mechanical structure with a mechanical resonant frequency of one of: less than 200 KHz; 200-300 KHz; 300-400 KHz; above 400 KHz; above 600 KHz; or above 1 MHz. ### Claim 9 A speaker device comprising: a first conductive layer with a plurality of first center structures and first springs coupled to the first center structures; a second conductive layer with a plurality of perforations; and electrical isolation rings; a third conductive layer with a plurality of second center structures and second springs coupled to the second center structures; and a dielectric layer; a substrate, wherein the substrate and dielectric includes at least one through hole; and wherein the first, second and third conductive layers are in physical contact with the dielectric layer and are electrically isolated from each other. ### Claim 10 (depends on 9) The speaker device of claim 9, wherein the second conductive layer is physically connected to the dielectric layer at its perimeter with at least 70 percent of its perimeter and is constructed and arranged to restrict airflow from a bottom side of the second conductive layer to a top side of the second conductive layer to substantially a set of perforations in the second conductive layer. ### Claim 11 (depends on 9) The speaker device of claim 9, wherein the second conductive layer is physically connected to the dielectric layer at its perimeter with any of at least 60 percent; at least 80 percent; at least 90 percent of its perimeter and restricts airflow from a bottom side of the second conductive layer to a top side of the second conductive layer to substantially a set of perforations in the second conductive layer. ### Claim 12 (depends on 9) The speaker device of claim 9, wherein the conductive layers are any of polysilicon; doped polysilicon; Aluminum (Al); Aluminum-Copper alloys (AlCu); Aluminum-Silicon-Copper alloys (AlSiCu); or Nickel (Ni). ### Claim 13 (depends on 9) The speaker device of claim 9 wherein the dielectric layer material is any of silicon mononitride (SiN); silicon-rich nitride (SiRN); titanium nitride (TiN); tantalum oxide (TaO); tantalum nitride (TaN); aluminum oxide (AlOx); or silicon dioxide (SiO2). ### Claim 14 (depends on 9) The speaker device of claim 9, wherein each of the first and second center structures has a radially symmetric shape. ### Claim 15 (depends on 9) The speaker device of claim 9, wherein the first springs and first center structures comprise a first mechanical structure with a mechanical resonant frequency of one of: less than 200 KHz; 200-300 KHz; 300-400 KHz; above 400 KHz; above 600 KHz; or above 1 MHz. ### Claim 16 (depends on 9) The speaker device of claim 9, wherein the second springs and second center structures comprise a second mechanical structure with a mechanical resonant frequency of one of: less than 200 KHz; 200-300 KHz; 300-400 KHz; above 400 KHz; above 600 KHz; or above 1 MHz.