Semiconductor device and method for driving the same

A semiconductor device comprising:

• a first N channel transistor having a gate receiving a second voltage as an input of the first N channel transistor;
• a first resistance element having a second terminal connected to a drain of the first N channel transistor;
• a second resistance element having a first terminal connected to a source of the first N channel transistor;
• a second N channel transistor having a gate receiving the second voltage as an input of the second N channel transistor;
• a third resistance element having a second terminal connected to a drain of the second N channel transistor;
• a fourth resistance element having a first terminal connected to a source of the second N channel transistor;
• and
• an isolator having a first terminal connected to the drain of the first N channel transistor and having a second terminal connected to the drain of the second N channel transistor,
• wherein the first resistance element has a first terminal connected to a power supply line having a first voltage,
• wherein the second resistance element has a second terminal connected to a power supply line having a third voltage,
• wherein the third resistance element has a first terminal connected to the power supply line having the first voltage,
• wherein the fourth resistance element has a second terminal connected to the power supply line having the third voltage, and
• wherein the semiconductor device further comprises:
• a fifth resistance element having a first terminal connected to the power supply line having the first voltage;
• a third N channel transistor having a drain connected to the power supply line having the first voltage, having a source connected to the second terminal of the first resistance element, and having a gate connected to a second terminal of the fifth resistance element;
• a fourth N channel transistor having a drain connected to the second terminal of the fifth resistance element, having a source connected to the power supply line having the third voltage, and having a gate receiving a signal having a same waveform as that of a signal to be input to the gate of the first N channel transistor;
• a sixth resistance element having a first terminal connected to the power supply line having the first voltage;
• a fifth N channel transistor having a drain connected to the power supply line having the first voltage, having a source connected to the second terminal of the third resistance element, and having a gate connected to a second terminal of the sixth resistance element;
• and
• a sixth N channel transistor having a drain connected to the second terminal of the sixth resistance element, having a source connected to the power supply line having the third voltage, and having a gate receiving a signal having a same waveform as that of a signal to be input to the gate of the second N channel transistor.