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US 12,597,906 B2Granted
Doped crystalline piezoelectric resonator films and methods of forming doped single crystalline piezoelectric resonator layers on substrates via epitaxy
AssigneeAkoustis Technologies Corp.
InventorsCraig Moe, Jeffrey M. Leathersich, Dae Ho Kim, Zhiqiang Bi, Mary Winters
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Abstract
A piezoelectric resonator can include a substrate and a piezoelectric aluminum nitride layer on the substrate, where the piezoelectric aluminum nitride layer is doped with a dopant selected from the group consisting of Si, Mg, Ge, C, Sc and/or Fe at a respective level sufficient to induce a stress in the piezoelectric aluminum nitride layer in a range between about 150 MPa compressive stress and about 300 MPa tensile stress.
Claims14
A piezoelectric resonator comprising:
- a substrate;
- and
- a piezoelectric aluminum nitride layer on the substrate, the piezoelectric aluminum nitride layer doped with Si at a concentration of the Si in a range between 1E17 per cubic centimeter to 3.5E17 per cubic centimeter or Sc at a concentration of the Sc up to 1E19 per cubic centimeter to induce a stress in the piezoelectric aluminum nitride layer in a range between about −150 MPa (compressive) stress and about 300 MPa (tensile) stress;
- wherein the piezoelectric aluminum nitride layer has a thickness of at least 400 nanometers and no more than 1 micrometer.
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A piezoelectric resonator material comprising:
- a SiC substrate;
- and
- a piezoelectric aluminum nitride layer on the SiC substrate, the piezoelectric aluminum nitride layer doped with a dopant of Si to provide the piezoelectric aluminum nitride layer with a doped concentration of Si in a range between about 1E17/cm3 to about 3.5E17/cm3;
- wherein the piezoelectric aluminum nitride layer has a thickness of at least 400 nanometers and no more than 1 micrometer.
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A piezoelectric resonator material comprising:
- a SiC substrate;
- and
- a piezoelectric aluminum nitride layer on the SiC substrate, the piezoelectric aluminum nitride layer doped with Sc to provide the piezoelectric aluminum nitride layer with a doped concentration of Sc that is between about 1E19/cm3 and about 1E16/cm3;
- wherein the piezoelectric aluminum nitride layer has a thickness of at least 400 nanometers and no more than 1 micrometer.
1 more element
Dependencies are inferred from the claim text.