Piezoelectric bulk layers with tilted c-axis orientation and methods for making the same

A piezoelectric structure with enhanced shear mode coupling comprising:

• a substrate comprising a wafer or a portion thereof;
• and
• a bulk material layer deposited directly onto the substrate without first depositing a seed layer, at an off-normal incidence angle, wherein the bulk material layer has a c-axis tilt that ranges from about 35 degrees to about 85 degrees;
• and
• wherein the bulk material layer exhibits a ratio of shear coupling to longitudinal coupling of 1.25 or greater during excitation.

A piezoelectric structure with a preselected c-axis tilt angle comprising:

• a substrate comprising a wafer or a portion thereof;
• and
• a bulk material layer deposited directly onto the substrate without first depositing a seed layer, at an off-normal incidence angle, wherein a plurality of crystals in the bulk material layer are substantially parallel to one another and are substantially oriented in a direction of the preselected c-axis tilt angle;
• and
• wherein the piezoelectric structure exhibits a ratio of shear coupling to longitudinal coupling of 1.25 or greater during excitation.