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US 12,597,893 B2Granted
Semiconductor integrated circuit and radio-frequency module
AssigneeMurata Manufacturing Co., Ltd.
InventorHiroshi Nishikawa
Life of this patent
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Abstract
A semiconductor IC includes a first radio-frequency element (e.g., an inductor in a low-noise amplifier), a second radio-frequency element (e.g., an inductor in a low-noise amplifier), a first via conductor (e.g., a via conductor that is placed between the first radio-frequency element and the second radio-frequency element and that is connected to a ground potential.
Claims16
A semiconductor integrated circuit comprising:
- a first radio-frequency circuit element;
- a second radio-frequency circuit element;
- a first low-noise amplifier;
- a second low-noise amplifier;
- and
- a first via conductor between the first radio-frequency circuit element and the second radio-frequency circuit element and that is connected to a ground potential,
- wherein the first radio-frequency circuit element comprises a first inductor,
- wherein the second radio-frequency circuit element comprises a second inductor,
- wherein the first low-noise amplifier comprises the first inductor,
- wherein the second low-noise amplifier comprises the second inductor,
- wherein the first inductor comprises a choke inductor, and
- wherein the second inductor comprises a source inductor.
9 more elements
Dependencies are inferred from the claim text.