US 12,597,760 B2Granted

Light-emitting device

AssigneeNichia Corporation

InventorsTakeshi Imai, Koji Yuasa

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Abstract

A light-emitting device includes semiconductor laser elements including first color-light-emitting laser elements that emit red light, arrayed in a matrix of M rows and N columns (where M≥2 and N≥3). The first color-light-emitting laser elements include two or more first semiconductor laser elements each having an emission peak wavelength of smaller than 647 nm±2 nm, two or more second semiconductor laser elements each having an emission peak wavelength of smaller than 643 nm±2 nm, and two or more third semiconductor laser elements each having an emission peak wavelength of smaller than 639 nm±2 nm. In the M rows and the N columns, in whole or in part, a semiconductor laser element other than the two or more first semiconductor laser elements is adjacent to any one of the two or more first semiconductor laser elements.

Claims15

Dependent claims

A light-emitting device comprising:

a plurality of semiconductor laser elements including a plurality of first color-light-emitting laser elements that emit red light, the first color-light-emitting laser elements including first to R-th types of semiconductor laser elements (where R is a natural number and R≥3) arrayed in a matrix of M rows and N columns (where M is a natural number and M≥2, and Nis a natural number and N≥3),
wherein the first color-light-emitting laser elements include
two or more first semiconductor laser elements, as the first type of semiconductor laser elements, each having an emission peak wavelength of smaller than 647 nm±2 nm,
two or more second semiconductor laser elements, as the second type of the semiconductor laser elements, each having an emission peak wavelength of smaller than 643 nm±2 nm, and
two or more third semiconductor laser elements, as the third type of semiconductor laser elements, each having an emission peak wavelength of smaller than 639 nm±2 nm, and
in the M rows and the N columns, in whole or in part, the first color-light-emitting laser elements are disposed so that
in a row direction,
a semiconductor laser element other than the two or more first semiconductor laser elements is adjacent to any one of the two or more first semiconductor laser elements,
a semiconductor laser element other than the two or more second semiconductor laser elements is adjacent to any one of the two or more second semiconductor laser elements, and
a semiconductor laser element other than the two or more third semiconductor laser elements is adjacent to any one of the two or more third semiconductor laser elements,
in the row direction,
any one of the two or more first semiconductor laser elements is not adjacent to any one of the two or more first semiconductor laser elements,
any one of the two or more second semiconductor laser elements is not adjacent to any one of the two or more second semiconductor laser element, and
any one of the two or more third semiconductor laser elements is not adjacent to any one of the two or more third semiconductor laser elements,
a plurality of the semiconductor laser elements arranged in the same row are electrically connected in series, and
a value obtained by dividing N by R is not an integer.

13 more elements

A light-emitting device comprising:

a plurality of semiconductor laser elements including a plurality of first color-light-emitting laser elements that emit green light, the first color-light-emitting laser elements including first to R-th types of semiconductor laser elements (where R is a natural number and R≥3) arrayed in a matrix of M rows and N columns (where M is a natural number and M≥2, and N is a natural number and N≥3),
wherein the first color-light-emitting laser elements include
two or more first semiconductor laser elements, as the first type of semiconductor laser elements, each having an emission peak wavelength in a range of greater than 527 nm and smaller than 532 nm,
two or more second semiconductor laser elements, as the second type of semiconductor laser elements, each having an emission peak wavelength in a range of greater than 523 nm and smaller than 527 nm, and
two or more third semiconductor laser elements, as the third type of semiconductor laser elements, each having an emission peak wavelength in a range of greater than 518 nm and smaller than 523 nm, and
in the M rows and the N columns, in whole or in part, the plurality of first color-light-emitting laser elements are disposed so that
in a row direction,
a semiconductor laser element other than the two or more first semiconductor laser elements is adjacent to any one of the two or more first semiconductor laser elements,
a semiconductor laser element other than the two or more second semiconductor laser elements is adjacent to any one of the two or more second semiconductor laser elements, and
a semiconductor laser element other than the two or more third semiconductor laser elements is adjacent to any one of the two or more third semiconductor laser elements,
in the row direction,
any one of the two or more first semiconductor laser elements is not adjacent to any one of the two or more first semiconductor laser elements,
any one of the two or more second semiconductor laser elements is not adjacent to any one of the two or more second semiconductor laser element, and
any one of the two or more third semiconductor laser elements is not adjacent to any one of the two or more third semiconductor laser elements, and
a plurality of the semiconductor laser elements arranged in the same row are electrically connected in series, and
a value obtained by dividing N by R is not an integer.

13 more elements

A light-emitting device comprising:

a plurality of semiconductor laser elements including a plurality of first color-light-emitting laser elements that emit green light, the first color-light-emitting laser elements including first to R-th types of semiconductor laser elements (where R is a natural number and R≥3) arrayed in a matrix of M rows and N columns (where M is a natural number and M≥2, and N is a natural number and N≥3),
wherein the first color-light-emitting laser element includes
two or more first semiconductor laser elements, as the first type of semiconductor laser elements, each having an emission peak wavelength in a range of greater than 534 nm and smaller than 539 nm,
two or more second semiconductor laser elements, as the second type of semiconductor laser elements, each having an emission peak wavelength in a range of greater than 530 nm and smaller than 534 nm, and
two or more third semiconductor laser elements, as the third type of semiconductor laser elements, each having an emission peak wavelength in a range of greater than 525 nm and smaller than 530 nm, and
in the M rows and the N columns, in whole or in part, the plurality of first color-light-emitting laser element are disposed so that
in a row direction,
a semiconductor laser element other than the two or more first semiconductor laser elements is adjacent to any one of the two or more first semiconductor laser elements,
a semiconductor laser element other than the two or more second semiconductor laser elements is adjacent to any one of the two or more second semiconductor laser elements, and
a semiconductor laser element other than the two or more third semiconductor laser elements is adjacent to any one of the two or more third semiconductor laser elements,
in the row direction,
any one of the two or more first semiconductor laser elements is not adjacent to any one of the two or more first semiconductor laser elements,
any one of the two or more second semiconductor laser elements is not adjacent to any one of the two or more second semiconductor laser element, and
any one of the two or more third semiconductor laser elements is not adjacent to any one of the two or more third semiconductor laser elements,
a plurality of the semiconductor laser elements arranged in the same row are electrically connected in series, and
a value obtained by dividing N by R is not an integer.

13 more elements

Dependencies are inferred from the claim text.

Facts

Application: 18/145,011Filed 21 Dec 2022
Priority: JP 2021-21099224 Dec 2021
Published: US 2023/0208111 A129 Jun 2023
Granted: 7 Apr 2026
Term ends: Not estimatedThe source records don’t support an estimate.

Classification13 codes

H01S 5/4087
Array arrangements, e.g. constituted by discrete laser diodes or laser bar: emitting more than one wavelength
H01S 5/423
Arrays of surface emitting lasers: having a vertical cavity
G02B 27/48
Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00: laser speckle optics
H01S 5/32308
In AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser: emitting light at a wavelength less than 900 nm