Plasma processing apparatus and matching method
AssigneeTokyo Electron Limited
InventorsSho Sato, Ken Yoshida
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AssigneeTokyo Electron Limited
InventorsSho Sato, Ken Yoshida
Estimating the term…
A plasma processing apparatus includes a chamber in which a plasma processing is performed, an electrode that supplies a radio-frequency power to the chamber for the plasma processing; a radio-frequency power supply electrically connected to the electrode, and a matching device connected between the radio-frequency power supply and the electrode. The radio-frequency power supply supplies one of a modulated wave and a continuous wave of a radio-frequency power to the electrode. The modulated wave is generated by alternately increasing or decreasing the power level of the radio-frequency power. The matching device gradually changes a load impedance to a target impedance during a period in which the continuous wave is supplied before or after the power supplied from the radio-frequency power supply to the electrode is switched from one of the modulated wave and the continuous wave to the other.
A plasma processing apparatus comprising:
Dependencies are inferred from the claim text.