Shape-based proximity effect correction method for throughput, patterning fidelity, and contrast enhancement of particle beam lithography and imaging structure

A shape-based proximity effect correction method for throughput, patterning fidelity, and contrast enhancement of particle beam lithography, comprising:

• a step of initializing an imaging structure, wherein a target pattern is established, and an imaging structure (L1+2) is initialized, wherein the imaging structure (L1+2) includes a bottom layer (L1) with a base pattern, a top layer (L2) positioned on the upper surface of the bottom layer (L1) with a compensatory pattern, a width (W) defined by the opposing sides of the compensatory pattern on the top layer (L2), and a space (S) defined by the lateral sides of the base pattern on the bottom layer (L1) and the lateral sides of the compensation pattern on the top layer (L2), wherein the imaging structure (L1+2) serves for producing an imaging pattern using an exposure device;
• and
• a step of adjusting the imaging structure, wherein a correction amount calculated based on the combinations of the width (W) and space (S) values is used to simultaneously modify the base pattern on the bottom layer (L1) and the compensatory pattern on the top layer (L2), and the imaging pattern is stimulated for correction until the contour variation between the corrected imaging pattern and the target pattern falls within a defined tolerance range to obtain an optimal width (Wopt) and an optimal space (Sopt).