Program verify compensation in a memory device with a defective deck
AssigneeMicron Technology, Inc.
InventorsYu-Chung Lien, Jun Wan, Zhenming Zhou
Life of this patent
Estimating the term…
Abstract
A request to perform a program operation to program a set of memory cells on a memory device is received. A defect indicator associated with the set of memory cells is determined to satisfy a defect condition. A value of a program verify parameter is determined based on the defect indicator. The program operation is performed using the value of the program verify parameter during a program verify phase of the program operation.
Claims20
A system comprising:
- a memory device;
- and
- a processing device, operatively coupled to the memory device, to perform operations comprising:
- receiving a request to perform a program operation to program a set of memory cells on the memory device;
- determining that a defect indicator associated with the set of memory cells satisfies a defect condition;
- identifying, based on the defect indicator, a value of a program verify parameter;
- determining, based on the value of the program verify parameter, an adjusted program verify threshold voltage level;
- and
- performing the program operation using the adjusted program verify threshold voltage level during a program verify phase.
A method comprising:
- receiving a request to perform a program operation to program a set of memory cells on a memory device;
- determining that a defect indicator associated with the set of memory cells satisfies a defect condition;
- identifying, based on the defect indicator, a value of a program verify parameter;
- determining, based on the value of the program verify parameter, an adjusted program verify threshold voltage level;
- and
- performing the program operation using the adjusted program verify threshold voltage level during a program verify phase.
A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:
- initiating a program operation to program a set of memory cells of a memory device;
- determining that a defect indicator associated with the set of memory cells satisfies a defect condition;
- identifying, based on the defect indicator, a value of a program verify parameter;
- determining, based on the value of the program verify parameter, an adjusted program verify threshold level;
- and
- performing the program operation using the adjusted program verify threshold voltage a program verify phase of the program operation.
Dependencies are inferred from the claim text.