Multi-step read pass voltage discharge for ICC reduction
AssigneeSanDisk Technologies LLC
InventorsAlbert Bor Kai Chen, Xiang Yang, Jiahui Yuan
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AssigneeSanDisk Technologies LLC
InventorsAlbert Bor Kai Chen, Xiang Yang, Jiahui Yuan
Estimating the term…
Technology is disclosed herein for a storage system and method for multi-stage discharge of a read pass voltage. In an aspect, the voltage on unselected word lines is reduced from the read pass voltage to an intermediate voltage during a first stage near the end of a read operation. A read reference voltage on the selected word line may be changed (e.g., increased) to the intermediate voltage during the first stage. During a second stage the voltage on the unselected word lines may be reduced from the intermediate voltage to a final voltage. The voltage on the selected word line may also be decreased during the second stage from the intermediate voltage to the final voltage. The multi-stage discharge of the read pass voltage may reduce peak current consumption (e.g., peak Icc) in a final portion of the read operation.
An apparatus comprising:
A method for reading memory cells in a three dimensional memory structure, the method comprising:
A non-volatile storage system, comprising:
Dependencies are inferred from the claim text.