Memory device and memory system

A memory system, comprising:

• a memory including:
• a magnetic memory element that includes:
• a reference layer, wherein the reference layer has a fixed magnetization direction;
• an insulating layer;
• and
• a storage layer, wherein
• the storage layer is stacked on the reference layer via the insulating layer,
• the storage layer has a reversible magnetization direction,
• the storage layer is configured to store a datum in association with two states of a parallel state and an anti-parallel state,
• a first magnetization direction of the reference layer and a second magnetization direction of the storage layer are same in the parallel state, and
• the first magnetization direction of the reference layer and the second magnetization direction of the storage layer are different in the anti-parallel state;
• an auxiliary magnetic field application unit configured to apply an auxiliary magnetic field for transition of the magnetic memory element from the parallel state to the anti-parallel state;
• a write control unit configured to:
• execute an initialization process based on an application of an initialization voltage and an initialization magnetic field to the magnetic memory element, wherein
• the initialization voltage and the initialization magnetic field is applied to the magnetic memory element to set the magnetic memory element into the anti-parallel state, and
• the initialization process is executed on the magnetic memory element to generate an initialized magnetic memory element;
• and
• execute a writing process of the datum based on an application of a state inversion voltage and a state inversion magnetic field to the initialized magnetic memory element, wherein
• the state inversion voltage and the state inversion magnetic field is applied to the initialized magnetic memory element to execute a state inversion process on the initialized magnetic memory element,
• the state inversion process is executed to set the magnetic memory element from the anti-parallel state to the parallel state,
• the state inversion process is executed on the initialized magnetic memory element based on a value of the datum, and
• the initialization magnetic field is stronger than the state inversion magnetic field;
• and
• a memory control unit configured to control the write control unit to write data, wherein the write control unit is controlled based on a command from a host system.