Method, apparatus and system for processing semiconductor structure

An apparatus for processing a semiconductor structure, comprising:

• a box body, comprising a vacuum chamber;
• a spin-coating machine, disposed in the vacuum chamber, and configured to form a photoresist layer on a semiconductor substrate, wherein the photoresist layer comprises an edge area and a middle area that are adjacently distributed, and the edge area comprises a protrusion;
• wherein the spin-coating machine comprises a rotary table, configured to bear the semiconductor substrate, and drive the semiconductor substrate to rotate;
• a position detection assembly, disposed in the vacuum chamber, and configured to detect position information of the protrusion, and determine a target etching area according to the position information, wherein the protrusion is located in the target etching area;
• an etching machine, disposed in the vacuum chamber and electrically connected to the position detection assembly, wherein the etching machine is configured to receive the target etching area that is determined by the position detection assembly, and etch the photoresist layer located in the target etching area;
• wherein the position detection assembly is located on a side of the semiconductor substrate away from the rotary table, and is moved from outside of the semiconductor substrate to the middle area via the edge area;
• the position detection assembly comprises:
• a detection circuit, configured to detect a boundary of the protrusion close to the middle area during moving from the outside of the semiconductor substrate to the middle area via the edge area;
• and
• an area determination module, configured to determine the target etching area according to the boundary of the protrusion close to the middle area and a boundary of the edge area away from the middle area;
• a curve generation module, configured to generate a change curve according to an actual position of a detection probe of the detection circuit and a thickness of the photoresist layer corresponding to the actual position;
• and
• a boundary determination module, configured to determine the boundary of the protrusion close to the middle area according to the change curve.