Silanol-containing organic-inorganic hybrid coatings for high resolution patterning

A method of producing a semiconductor device, comprising:

• forming an organic underlayer film on a semiconductor substrate;
• applying a coating composition for forming a resist film onto the organic underlayer film and baking the coating composition to form a resist film;
• exposing the resist film to light;
• after the light exposure, developing the resist film to form a resist pattern;
• etching a resist underlayer film using the resist pattern;
• etching the organic underlayer film using the resist underlayer film thus patterned;
• and
• fabricating the semiconductor substrate using the organic underlayer film thus patterned,
• wherein the coating composition comprises, in liquid phase, a solvent and a resin having the general formula (I):
• wherein
• A, B, C, and D each represent an integer independently selected from 1 to 1000;
• Z stands for a functional group and M stands for a metal atom;
• R1 to R8 stand for hydrocarbyl radicals;
• and
• a, b, m, o, y, z, p, q and x each independently stand for an integer of 0 to 3,
• wherein the resin has a silicon content of 35% by weight or more,
• wherein the metal is selected from the group consisting of antimony, bismuth, germanium, hafnium, iron, molybdenum, cerium, lanthanum, yttrium, tin, titanium, zirconium, aluminium, and combinations thereof, and
• wherein the coating composition is a resist coating.