Monolithic semiconductor-based optically addressable light valve comprising a liquid crystal layer

A monolithic transmissive light valve system, comprising

• a liquid crystal layer;
• a first semiconductor transparent electrode layer on a first semi-insulating photoconductor layer comprising a first wide bandgap semiconductor layer;
• a second semiconductor transparent electrode layer on a second semi-insulating photoconductor layer comprising a second wide bandgap semiconductor layer;
• and
• a plurality of alignment layers and antireflective layers monolithically formed on at least one of the first and semiconductor transparent electrode layers, and the first and second semi-insulating photoconductor layers,
• wherein the light valve system operates with an energy density greater than 2 Joules/cm2.

A process for manufacturing a transmissive light valve system, comprising the steps of

• providing a liquid crystal layer;
• positioning a first light patterning stack comprising a first semiconductor transparent electrode layer and a first photoconductor layer having a first semi-insulating semiconductor layer having bandgap greater than 3 ev in contact with the liquid crystal layer;
• and
• positioning a second light patterning stack comprising a second semiconductor transparent electrode layer and a second photoconductor layer having a second semi-insulating semiconductor layer having a bandgap greater than 3 ev in contact with the liquid crystal layer, wherein the light valve system operates with an energy density greater than 2 Joules/cm2.