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US 12,596,078 B2Granted
Apparatus for analyzing metal contamination of a wafer and a method thereof
AssigneeSK Siltron Co., Ltd.
InventorWoo Young Park
Life of this patent
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Abstract
A method for analyzing metal contamination of a wafer comprises obtaining a contamination level of a first metal and a contamination level of a second metal for the wafer, obtaining a correction value by substituting the obtained contamination level of the second metal into a correlation equation, and obtaining a final contamination level of the first metal, by correcting the contamination level of the obtained first metal based on the correction value.
Claims16
A method for analyzing metal contamination of a wafer, comprising:
- obtaining a contamination level of a first metal and a contamination level of a second metal for the wafer;
- obtaining a correction value by substituting the obtained contamination level of the second metal into a correlation equation;
- and
- obtaining a final contamination level of the first metal, by correcting the contamination level of the obtained first metal based on the correction value.
1 more element
An apparatus for analyzing metal contamination of a wafer, comprising:
- a controller,
- wherein the controller is configured to:
- obtain a contamination level of a first metal and a contamination level of a second metal for the wafer;
- obtain a correction value by substituting the obtained contamination level of the second metal into a correlation equation;
- and
- obtain a final contamination level of the first metal, by correcting the contamination level of the obtained first metal based on the correction value.
3 more elements
Dependencies are inferred from the claim text.