# US 12,595,564 B2 · Method of forming surface treatment film

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 12,595,564 B2
- Document ID: US12595564B2
- Status: Granted
- Kind: B2
- Application number: 18/662,778
- Filed: 2024-05-13
- Published: 2024-11-21
- Granted: 2026-04-07
- Earliest claimed: 2023-05-17
- Assignees: Tokyo Ohka Kogyo Co., Ltd.
- Applicants: Tokyo Ohka Kogyo Co., Ltd.
- Inventors: Koya Inomata; Daichi Tanaka
- Web page: https://patentgrep.com/patent/US12595564B2

## CPC

- C23C 16/56: After-treatment
- C23C 16/0227: {by cleaning or etching}
- C23C 16/45525: {Atomic layer deposition [ALD]}
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/43: Chemical deposition, e.g. chemical vapour deposition [CVD]
- H10P 14/432: {using selective deposition}
- H10P 14/6304: {Formation by oxidation, e.g. oxidation of the substrate}
- H10P 14/6502: {of treatments performed before formation of the materials}
- H10P 70/15: {by wet cleaning only (H10P70/52 takes precedence)}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method of forming a surface treatment film on a substrate having, on a surface thereof, a first region where an insulator is exposed and a second region where at least one metallic matter is exposed, in which the surface treatment film is formed on the second region and is capable of suppressing intrusion of the surface treatment film onto the first region. A method of forming a surface treatment film, including preparing the substrate, oxidizing a surface of the second region, and forming a surface treatment film on the second region by exposing a surface of the substrate after the oxidation to a surface-treatment agent including a thiol having 8 or less carbon atoms.

## Claims

### Claim 1

A method of forming a surface treatment film, comprising preparing a substrate having, on a surface thereof, a first region where an insulator is exposed and a second region where at least one metallic matter selected from a metal or a conductive metal-containing compound is exposed,
oxidizing a surface of the second region, and
exposing the surface of the substrate after the oxidizing to a surface-treatment agent comprising a thiol having 8 or fewer carbon atoms to form the surface treatment film on the second region, wherein the surface treatment film has a thickness of 10 nm or more, and
wherein the formation of the surface treatment film is configured to suppress an overhang of a second insulator formed on the insulator deposited on the first region.

### Claim 2 (depends on 1)

The method of claim 1, wherein the insulator has a recess on a surface of the substrate and the second region where the metallic matter is exposed is formed in the recess.

### Claim 3 (depends on 1)

The method of claim 1, wherein the insulator is at least one selected from the group consisting of silicon oxide, aluminum oxide, titanium oxide, zirconium oxide, hafnium oxide, tantalum oxide, a fluorine-containing silicon oxide, a carbon-containing silicon oxide, silicon nitride, boron nitride, silicon carbide, silicon carbonitride, silicon oxynitride, silicon oxycarbonitride, silicon, and silicon doped with at least one selected from phosphorus, boron, or germanium, and
the metallic matter is at least one selected from the group consisting of copper, cobalt, molybdenum, and ruthenium.

### Claim 4 (depends on 1)

The method of claim 1, wherein the thiol includes at least one selected from the group consisting of butanethiol, pentanethiol, hexanethiol, heptanethiol, of and octanethiol.

### Claim 5 (depends on 1)

The method of claim 1, further comprising cleaning the substrate having the surface treatment film formed thereon, with a solvent after the exposing.

### Claim 6 (depends on 5)

The method of claim 5, wherein the solvent includes a fatty acid alkyl ester.