Substrate processing method

A substrate processing method comprising:

• preparing a substrate in a chamber of a substrate processing apparatus;
• correcting a set power value of electric power applied to the chamber based on a correction value Y obtained from Equation (1), coefficients A, B, C, and D, and a variable X indicating a processed amount of a plurality of substrates having been subjected to continuous film formation processes, while referring to a storage part in which the coefficients A, B, C, and D of the Equation (1) used to calculate the correction value Y for the set power value are stored;
• and
• processing the prepared substrate by applying power with the corrected power value into the chamber,
• wherein the Equation (1) is indicated as follows:
• Y=A exp(BX)+CX+D Equation (1)
• wherein at least one of the coefficients A, C, and D is not zero, and when the coefficient A is not zero, the coefficient B is also not zero, and
• wherein when the correction value Y is greater than a given upper limit value, or when the correction value Y is less than a given lower limit value, the processing the prepared substrate is not performed.