# US 12,595,557 B2 · Method of forming structure including a doped adhesion film > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,595,557 B2 - Document ID: US12595557B2 - Status: Granted - Kind: B2 - Application number: 18/141,694 - Filed: 2023-05-01 - Published: 2023-11-02 - Granted: 2026-04-07 - Earliest claimed: 2022-05-02 - Assignees: ASM IP Holding B.V. - Applicants: ASM IP Holding B.V. - Inventors: Moataz Bellah Mousa; Jiyeon Kim; Jaebeom Lee; Charith Eranga Nanayakkara; Paul Ma; Chuandao Wang; Youngchol Byun; Jacqueline Wrench; Guannan Chen - Web page: https://patentgrep.com/patent/US12595557B2 ## CPC - C23C 16/22: characterised by the deposition of inorganic material, other than metallic material - C23C 16/0272: {Deposition of sub-layers, e.g. to promote the adhesion of the main coating} - C23C 16/045: {Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates} - C23C 16/06: characterised by the deposition of metallic material - C23C 16/34: Nitrides {(C23C16/303 takes precedence)} - C23C 16/45523: {Pulsed gas flow or change of composition over time} - C23C 16/45525: {Atomic layer deposition [ALD]} - C23C 16/56: After-treatment - H10P 14/432: {using selective deposition} - H10W 20/033: {in openings in dielectrics} - H10W 20/045: {for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD]} - H10W 20/056: {by filling conductive material into holes, grooves or trenches} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A method and system for forming a structure are disclosed. An exemplary method includes providing a substrate comprising a plurality of gaps within a first reaction chamber, forming a doped adhesion film on the surface of a substrate and within the plurality of gaps, wherein the doped adhesion film comprises a first material and a second material, and depositing a metal overlying the doped adhesion film. Exemplary methods can further include a step of depositing a nucleation layer overlying the doped adhesion film. An exemplary system can perform the method of forming the structure. ## Claims ### Claim 1 A method of forming a structure, the method comprising the steps of: providing a substrate comprising a plurality of gaps within a first reaction chamber, forming a doped nitride adhesion film on a surface of the substrate and within the plurality of gaps, wherein the doped nitride adhesion film comprises a first material and a second material, wherein forming the doped nitride adhesion film comprises depositing a layer of the first material by a cyclical deposition process and depositing a layer of the second material by a cyclical deposition process, wherein the first material is overlying the second material, wherein the first material is represented by MnXm where M comprises at least one of molybdenum and ruthenium, X is a dopant comprising one or more of tungsten, boron, and tantalum, n ranges from 1 to 5, and m ranges from 1 to 10, and wherein the second material comprises titanium nitride; and depositing a metal overlying the doped nitride adhesion film, wherein the metal comprises at least one of molybdenum and ruthenium. ### Claim 2 (depends on 1) The method of claim 1, further comprising forming a nucleation layer comprising at least one of molybdenum and ruthenium overlying the doped nitride adhesion film. ### Claim 3 (depends on 1) The method of claim 1, wherein the dopant comprises boron. ### Claim 4 (depends on 3) The method of claim 3, wherein the step of forming the doped nitride adhesion film comprises forming the doped nitride adhesion film to a first thickness and wherein the step of forming the nucleation layer comprises forming the nucleation layer to a second thickness, wherein the first thickness is between 15 angstroms and 50 angstroms. ### Claim 5 (depends on 4) The method of claim 4, wherein the second thickness is between 1 angstrom and 10 angstroms. ### Claim 6 (depends on 3) The method of claim 3, wherein the doped nitride adhesion film comprises a mixture of the first material and the second material. ### Claim 7 (depends on 3) The method of claim 3, wherein the metal comprises ruthenium, and wherein the step of depositing the metal overlying the doped nitride adhesion film comprises depositing the metal at a deposition temperature greater than 600° Celsius. ### Claim 8 (depends on 1) The method of claim 1, wherein the dopant comprises tantalum. ### Claim 9 (depends on 1) The method of claim 1, wherein the dopant comprises tungsten. ### Claim 10 (depends on 9) The method of claim 9, wherein the step of forming the doped nitride adhesion film comprises: depositing a layer of the second material overlying the substrate, and depositing a layer of the first material overlying the layer of the second material. ### Claim 11 (depends on 9) The method of claim 9, wherein the step of forming the doped nitride adhesion film comprises: depositing a layer of the first material overlying the substrate, depositing a layer of the second material overlying the layer of the first material, and depositing a second layer of the first material overlying the layer of the second material. ### Claim 12 (depends on 1) The method of claim 1, wherein the second material further comprises one or more of molybdenum silicide and titanium silicide. ### Claim 13 (depends on 1) The method of claim 1, wherein the doped nitride adhesion film is formed on a layer of silicon oxide. ### Claim 14 (depends on 1) The method of claim 1, wherein the dopant consists of boron. ### Claim 15 (depends on 1) The method of claim 1, wherein the dopant consists of tantalum. ### Claim 16 (depends on 1) The method of claim 1, wherein the dopant consists of tungsten. ### Claim 17 (depends on 1) The method of claim 1, wherein a dopant ratio of the dopant to M in the doped nitride adhesion film is between 1:2 and 2:1. ### Claim 18 (depends on 1) The method of claim 1, wherein the doped nitride adhesion film comprises a homogenous mixture of the first material and the second material. ### Claim 19 (depends on 1) The method of claim 1, wherein the second material further comprises molybdenum silicide. ### Claim 20 (depends on 1) The method of claim 1, wherein the second material further comprises titanium silicide.