Method for manufacturing silicon-coated copper, silicon-coated anti-oxidation copper using same, and semiconductor device using same
AssigneePusan National University Industry-University Cooperation Foundation
InventorsSe Young Jeong, Su Jae Kim
Life of this patent
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Abstract
A silicon-coated oxidation-resistant copper includes a SiCuOx layer includes a silicon (Si)-oxygen (O)-copper (Cu) mixed layer formed by depositing silicon (Si). The silicon-coated oxidation-resistant copper includes: a copper layer; the SiCuOx layer including the silicon (Si)-oxygen (O)-copper (Cu) mixed layer formed on the copper layer; a first silicon (Si)-oxygen (O) mixed layer formed on the SiCuOx layer; a silicon (Si) layer formed on the first silicon (Si)-oxygen (O) mixed layer; and a second silicon (Si)-oxygen (O) mixed layer formed on the silicon layer (Si) layer.
Claims10
A silicon-coated oxidation-resistant copper comprising:
- a copper layer;
- a SiCuOx layer consisting of a silicon (Si)-oxygen (O)-copper (Cu) mixed layer formed on the copper layer by depositing silicon (Si);
- a first silicon (Si)-oxygen (O) mixed layer (30) formed on the SiCuOx layer;
- a silicon (Si) layer formed on the first silicon (Si)-oxygen (O) mixed layer;
- and
- a second silicon (Si)-oxygen (O) mixed layer (50) formed on the silicon layer (Si) layer.
Dependencies are inferred from the claim text.