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US 12,595,545 B2Granted
Methods for perovskite device processing by vapor transport deposition
AssigneeFirst Solar, Inc.
InventorsLe Chen, David Ho, Xiaoping Li, Rick Powell, Tze-Bin Song, Vera Steinmann, Aravamuthan Varadarajan, Dirk Weiss, Gang Xiong, Zhibo Zhao
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Abstract
Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.
Claims15
An intermediate structure for a perovskite photovoltaic device, comprising:
- a substrate stack, comprising a first electrode over a substrate, and a first charge transport layer over the first electrode;
- and
- a precursor layer over the first charge transport layer;
- wherein:
- the precursor layer has a thickness in a range of 100 nm to 2000 nm, and
- the precursor layer comprises a plurality of metal halide crystal grain structures, wherein the crystal grain structures have a grain height, normal to a surface of the substrate stack, and a grain width, parallel to the surface of the substrate stack, and an average grain width is less than a third of an average grain height.
3 more elements
An intermediate structure for a perovskite photovoltaic device, comprising:
- a substrate stack, comprising a first electrode over a substrate, and a first charge transport layer over the first electrode;
- and
- a precursor layer over the first charge transport layer, wherein:
- the precursor layer comprises a plurality of metal halide crystalline grains, and
- 30-100% of the metal halide crystalline grains have at least one dimension in a range of 200-800 nm.
2 more elements
Dependencies are inferred from the claim text.