# US 12,593,757 B2 · Light-emitting diode for generating a multi-peak broadband blue-violet light spectrum > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,593,757 B2 - Document ID: US12593757B2 - Status: Granted - Kind: B2 - Application number: 18/456,741 - Filed: 2023-08-28 - Published: 2024-04-11 - Granted: 2026-04-07 - Earliest claimed: 2022-09-30 - Assignees: Bridgelux Optoelectronics (Xiamen) Co., Ltd. - Applicants: KAISTAR Lighting(Xiamen) Co., Ltd. - Inventors: Ben-Jie Fan; Hung-Chih Yang; Shuen-Ta Teng - Web page: https://patentgrep.com/patent/US12593757B2 ## CPC - A01G 7/045: {with electric lighting} - H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures - H10H 20/8252: {characterised by the dopants} - H10H 20/825: containing nitrogen, e.g. GaN - A01G: HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING (picking of fruits, vegetables, hops or the like A01D46/00; propagating unicellular algae C12N1/12) - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract A light-emitting diode for plant illumination is provided. The light-emitting diode has a multiple quantum well structure for generating a light beam with a broadband blue-violet light spectrum. The broadband blue-violet light spectrum has a first peak and a second peak within a range from 410 nm to 450 nm, a wavelength value of the second peak is greater than a wavelength value of the first peak, and a difference between the wavelength value of the second peak and the wavelength value of the first peak ranges from 5 nm to 30 nm. The broadband blue-violet light spectrum generated by the light-emitting diode can better match a photosynthetic action spectrum of plants. ## Claims ### Claim 1 A light-emitting diode for plant illumination, the light-emitting diode having a multiple quantum well structure for generating a light beam with a broadband blue-violet light spectrum, wherein the broadband blue-violet light spectrum has a first peak and a second peak within a range from 410 nm to 450 nm, a wavelength value of the second peak is greater than a wavelength value of the first peak, and a difference between the wavelength value of the second peak and the wavelength value of the first peak ranges from 5 nm to 30 nm. ### Claim 2 (depends on 1) The light-emitting diode according to claim 1, wherein the light beam emitted by the light-emitting diode has a photosynthetic photon efficacy (PPE) greater than 2.0 μmol/j within a blue-violet wavelength band under operating current densities of 60 mA/mm2 and 120 mA/mm2. ### Claim 3 (depends on 1) The light-emitting diode according to claim 1, wherein a ratio of an intensity of the first peak to an intensity of the second peak ranges from 40% to 150%. ### Claim 4 (depends on 1) The light-emitting diode according to claim 1, wherein the broadband blue-violet light spectrum also has a second shoulder peak within a wavelength range from 430 nm to 480 nm, and a wavelength value of the second shoulder peak is greater than the wavelength value of the second peak, and a difference between the wavelength value of the second shoulder peak and the wavelength value of the second peak ranges from 5 to 30 nm; wherein a ratio of an intensity of the second shoulder peak to the intensity of the second peak is greater than 20% but less than 100%. ### Claim 5 (depends on 1) The light-emitting diode according to claim 1, wherein the broadband blue-violet light spectrum also has a first shoulder peak within a wavelength range from 380 nm to 420 nm, a wavelength value of the first shoulder peak is smaller than the wavelength value of the first peak, and a difference between the wavelength value of the first shoulder peak and the wavelength value of the first peak ranges from 0 to 20 nm; wherein a ratio of an intensity of the first shoulder peak to the intensity of the first peak is greater than 10% but less than 100%. ### Claim 6 (depends on 1) The light-emitting diode according to claim 1, wherein the multiple quantum well structure includes m well layers and m+1 barrier layers that are alternately stacked, the multiple quantum well structure is disposed between a P-type semiconductor layer and an N-type semiconductor layer and includes a plurality of second well layers and a plurality of third well layers, wherein the indium concentration of the third well layer is greater than the indium concentration of the second well layer. ### Claim 7 (depends on 6) The light-emitting diode according to claim 6, wherein the multiple quantum well structure further includes at least one fourth well layer, the indium concentration of the fourth well layer is greater than the indium concentration of the third well layers; and wherein the multiple quantum well structure also includes at least one first well layer, the indium concentration of the at least one first well layer is smaller than the indium concentration of the second well layer. ### Claim 8 (depends on 7) The light-emitting diode according to claim 7, wherein at least a first one of the well layers closest to the P-type semiconductor layer is the first well layer, at least two of the well layers that are located at a center of the multiple quantum well structure and close to the P-type semiconductor layer are the second well layers, at least two of the well layers located at a center of the light-emitting stack and close to the N-type semiconductor layer are the third well layers, and at least a first one of the well layers closest to the N-type semiconductor layer is the fourth well layer. ### Claim 9 (depends on 8) The light-emitting diode according to claim 8, wherein one of the second well layers is located between two of the third well layers. ### Claim 10 (depends on 6) The light-emitting diode according to claim 6, wherein the multiple quantum well structure further includes a plurality of barrier layers that are arranged alternately with the well layers, wherein a material of at least one of the barrier layers includes aluminum gallium nitride.