Power module package with stacked direct bonded metal substrates
AssigneeSemiconductor Components Industries, LLC
InventorsJonghwan Baek, Jeonghyuk Park, Seungwon Im, Keunhyuk Lee, Dukyong Lee
Life of this patent
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Abstract
A package includes a first direct bonded metal (DBM) substrate, a first semiconductor die disposed on a top surface of the first DBM substrate, a second DBM substrate disposed at a height above the first DBM substrate, and a second semiconductor die disposed on a top surface of the second DBM substrate. A wire bond is made between the first semiconductor die disposed on the top surface of the first DBM substrate and the second semiconductor die disposed on the top surface of the second DBM substrate.
Claims19
A package comprising:
- a first direct bonded metal (DBM) substrate;
- a first semiconductor die disposed on a top surface of the first DBM substrate;
- a second DBM substrate disposed above the first DBM substrate such that a section of the first semiconductor die is disposed between the first DBM substrate and the second DBM substrate, the second DBM substrate having a spacer layer formed along an edge and supporting the second DBM substrate above the first DBM substrate;
- a second semiconductor die disposed on a top surface of the second DBM substrate;
- and
- a wire bond between the first semiconductor die disposed on the top surface of the first DBM substrate and the second semiconductor die disposed on the top surface of the second DBM substrate.
A package comprising:
- a stack of direct bonded metal (DBM) substrates including at least a first DBM substrate and a second DBM substrate disposed above the first DBM substrate;
- a multiplicity of semiconductor die disposed on the stack of the DBM substrates including a first semiconductor die disposed on the first DBM substrate and a second semiconductor die disposed on the second DBM substrate, the second DBM substrate having a spacer layer formed along an edge and supporting the second DBM substrate above the first DBM substrate;
- an insulating adhesive layer disposed between the first DBM substrate and the second DBM substrate and between the first semiconductor die and the second DBM substrate, a portion of first semiconductor die being encapsulated in the insulating adhesive layer;
- and
- a wire bond between the first semiconductor die disposed on the first DBM substrate and the second semiconductor die disposed on the second DBM substrate.
A method comprising:
- disposing a first device die on a top surface of a first direct bonded metal (DBM) substrate;
- disposing a second DBM substrate above the first DBM substrate such that a first section of the first device die is disposed between the first DBM substrate and the second DBM substrate and a second section of the first device die is not disposed below the second DBM substrate, the second DBM substrate having a spacer layer formed along an edge and supporting the second DBM substrate above the first DBM substrate;
- disposing a second device die on a top surface of the second DBM substrate disposed above the first DBM substrate;
- and
- forming a wire bond between the first device die disposed on the top surface of the first DBM substrate and the second device die disposed on the top surface of the second DBM substrate.
Dependencies are inferred from the claim text.