Semiconductor device and manufacturing method thereof

A manufacturing method of a semiconductor device, comprising:

• providing a first semiconductor module and a second semiconductor module;
• covering the first semiconductor module and the second semiconductor module by a molding material, wherein the molding material is grinded to expose a plurality of a plurality of copper bumps electrically connected to the first semiconductor module and the second semiconductor module;
• and
• forming a redistribution layer (RDL) module connected to the first semiconductor module and the second semiconductor module, wherein the RDL module is connected with the copper bumps.

A manufacturing method of a semiconductor device, comprising:

• providing a first semiconductor module and a second semiconductor module;
• forming an interconnection module connected to the second semiconductor module;
• covering the first semiconductor module and the second semiconductor module by a molding material;
• and
• forming a redistribution layer (RDL) module on the first semiconductor module and the second semiconductor module, wherein the RDL module is connected with the first semiconductor module and the second semiconductor module through the interconnection module and a plurality of copper bumps;
• wherein surfaces of the copper bumps and a surface of the molding material are directly connected.