Semiconductor device comprising electrode terminals coated with an insulating film having a thickness of less than 100 microns, method of manufacturing the semiconductor device, and power conversion apparatus comprising the semiconductor device
AssigneeMitsubishi Electric Corporation
InventorYoshitaka Kimura
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Abstract
An object is to provide a technique that lowers the self-inductance of a semiconductor device. A semiconductor device includes an insulating substrate having a circuit pattern formed on an upper surface thereof, a semiconductor element mounted on the upper surface of the circuit pattern, and a plurality of electrode terminals each having one end portion bonded to the upper surface of the circuit pattern. The electrode terminals having portions of mutual adjacency of the plurality of electrode terminals are coated with the insulating film having a thickness of less than 100 at least at the portions.
Claims9
A semiconductor device comprising:
- an insulating substrate having a circuit pattern formed on an upper surface thereof;
- a semiconductor element mounted on the upper surface of the circuit pattern;
- and
- a plurality of electrode terminals each having one end portion bonded to the upper surface of the circuit pattern, wherein
- at least two of the electrode terminals each have portions that face each other that are coated with an insulating film having a thickness of less than 100 μm, and
- a distance between one of the portions of one of the electrode terminals and another of the portions of another of the electrode terminals closest to the one of the electrode terminals is less than 100 μm.
Dependencies are inferred from the claim text.