Semiconductor device and method for manufacturing the same

A semiconductor device, comprising:

• first and second devices bonded to each other,
• wherein the first device includes
• a first substrate;
• a first insulating layer on a first face of the first substrate, wherein the first insulating layer has one or more inner surfaces at least partially defining a first trench in the first insulating layer;
• a first via extending from a level within the first substrate and extending through the first face of the first substrate and a first bottom face of the first trench such that a portion of a sidewall of the first via and a top face of the first via are exposed through the first substrate;
• and
• a first pad contacting the exposed portion of the sidewall of the first via and the exposed top face of the first via and filling the first trench;
• wherein the second device includes
• a second substrate;
• a second insulating layer on a second face of the second substrate, wherein the second insulating layer has one or more inner surfaces at least partially defining a second trench in the second insulating layer;
• a second via extending from a level within the second substrate and extending through the second face of the second substrate and a second bottom face of the second trench such that a portion of a sidewall of the second via and a top face of the second via are exposed through the second substrate;
• and
• a second pad contacting the exposed portion of the sidewall of the second via and the exposed top face of the second via and filling the second trench,
• wherein the first insulating layer and the second insulating layer are bonded to each other, and the first pad and the second pad are bonded to each other,
• wherein the first insulating layer includes a passivation layer on the first face of the first substrate,
• wherein the passivation layer includes a first film disposed along the first face of the first substrate and at least a portion of the sidewall of the first via, and a second film disposed on the first film and separated from the portion of the sidewall of the first via by the first film, and
• wherein a vertical level of a top face of the first film disposed along the portion of the sidewall of the first via is lower than a vertical level of a top face of the second film.

A method for manufacturing a semiconductor device, the method comprising:

• forming an insulating layer on one face of a substrate, wherein a via is formed in the substrate and the insulating layer;
• etching the insulating layer to form a trench therein, wherein a portion of a sidewall of the via and a top face of the via are exposed through the trench;
• and
• forming a pad so as to contact the exposed top face of the via and the exposed portion of the sidewall of the via and so as to fill the trench,
• wherein forming the insulating layer on the one face of the substrate includes forming a passivation layer on the one face of the substrate, wherein at least a part of the sidewall of the via that is exposed through the substrate is covered with the passivation layer and the top face of the via is exposed through the passivation layer,
• wherein the passivation layer includes a first film disposed along the one face of the substrate and at least a portion of the sidewall of the via, and a second film disposed on the first film and separated from the portion of the sidewall of the via by the first film, and
• wherein a vertical level of a top face of the first film disposed along the portion of the sidewall of the via is lower than a vertical level of a top face of the second film.