# US 12,593,714 B2 · Semiconductor device including bonding enhancement layer and method of forming the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,593,714 B2 - Document ID: US12593714B2 - Status: Granted - Kind: B2 - Application number: 17/544,081 - Filed: 2021-12-07 - Published: 2022-12-22 - Granted: 2026-03-31 - Earliest claimed: 2021-06-22 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Taeyeong Kim; Taeseong Kim; Kwangjin Moon; Hyungjun Jeon - Web page: https://patentgrep.com/patent/US12593714B2 ## CPC - H10W 72/90: Bond pads, in general - H10F 39/8053: {Colour filters} - H10F 39/8063: {Microlenses} - H10W 72/073: {of die-attach connectors} - H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps - H10W 99/00: Subject matter not provided for in other groups of this subclass - H10W 90/792: {between multiple chips} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract A semiconductor device including a first structure including a first dielectric layer and a first conductive pattern in the first dielectric layer, the first conductive pattern including a first conductive material and a first bonding enhancement material; a second structure including a second dielectric layer and a second conductive pattern in the second dielectric layer, the second dielectric layer directly contacting the first dielectric layer, the second conductive pattern directly contacting the first conductive pattern; and a first bonding enhancement layer between the first conductive pattern and the second dielectric layer, wherein the first bonding enhancement layer includes the first bonding enhancement material or a material of the second dielectric layer, and the first bonding enhancement material includes a material having a higher bonding force to the material of the second dielectric layer than a bonding force of the first conductive material to the material of the second dielectric layer. ## Claims ### Claim 1 A semiconductor device, comprising: a first structure including a first dielectric layer and a first conductive pattern in the first dielectric layer, the first conductive pattern including a first conductive material and a first bonding enhancement material; a second structure including a second dielectric layer and a second conductive pattern in the second dielectric layer, the second dielectric layer directly contacting the first dielectric layer thereunder, the second conductive pattern directly contacting the first conductive pattern thereunder; and a first bonding enhancement layer between the first conductive pattern and the second dielectric layer, wherein: a bottom surface of the first bonding enhancement layer is at a lower level than an interface between the first dielectric layer and the second dielectric layer, a top surface of the first bonding enhancement layer is at a higher level than the interface between the first dielectric layer and the second dielectric layer, the first bonding enhancement layer includes the first bonding enhancement material or a material included in the second dielectric layer, and the first bonding enhancement material includes a material having a higher bonding force to the material included in the second dielectric layer than a bonding force of the first conductive material to the material included in the second dielectric layer. ### Claim 2 (depends on 1) The semiconductor device as claimed in claim 1, wherein the first bonding enhancement material includes a material having a higher bonding force to oxygen than a bonding force of the first conductive material to oxygen. ### Claim 3 (depends on 1) The semiconductor device as claimed in claim 1, wherein a content, in wt %, of the first bonding enhancement material in the first conductive pattern is smaller than a content, in wt %, of the first conductive material in the first conductive pattern. ### Claim 4 (depends on 1) The semiconductor device as claimed in claim 1, wherein: the first conductive material includes Cu, and the first bonding enhancement material includes Mn. ### Claim 5 (depends on 4) The semiconductor device as claimed in claim 4, wherein a content of Mn in the first conductive pattern is more than 0 wt % to 5 wt %. ### Claim 6 (depends on 1) The semiconductor device as claimed in claim 1, wherein the first bonding enhancement layer includes an oxide of the first bonding enhancement material, a silicate of the first bonding enhancement material, or a combination thereof. ### Claim 7 (depends on 1) The semiconductor device as claimed in claim 1, wherein the first bonding enhancement layer includes MnSiO, MnO, CuMnO, CuMnSiO, or a combination thereof. ### Claim 8 (depends on 1) The semiconductor device as claimed in claim 1, wherein: the first conductive pattern includes: a barrier layer, and a conductive layer on the barrier layer; the conductive layer includes the first conductive material and the first bonding enhancement material; and the first conductive material includes a material having a lower resistivity than the first bonding enhancement material. ### Claim 9 (depends on 8) The semiconductor device as claimed in claim 8, wherein: the first bonding enhancement layer is between the second dielectric layer and the conductive layer; and the first bonding enhancement layer directly contacts the second dielectric layer and the conductive layer. ### Claim 10 (depends on 8) The semiconductor device as claimed in claim 8, further comprising a seed layer between the barrier layer and the conductive layer, wherein: the seed layer includes the first conductive material and the first bonding enhancement material, and the first bonding enhancement layer is between the second dielectric layer and the conductive layer and between the second dielectric layer and the seed layer. ### Claim 11 (depends on 1) The semiconductor device as claimed in claim 1, wherein a thickness of the first bonding enhancement layer is greater than 0 nm to 1 nm. ### Claim 12 (depends on 1) The semiconductor device as claimed in claim 1, further comprising a second bonding enhancement layer between the second conductive pattern and the first dielectric layer, wherein: the second conductive pattern includes a second conductive material and a second bonding enhancement material, and the second bonding enhancement material includes a material having a higher bonding force to a material included in the first dielectric layer than a bonding force of the second conductive material to the material included in the first dielectric layer. ### Claim 13 (depends on 12) The semiconductor device as claimed in claim 12, wherein the second bonding enhancement material includes a material having a higher bonding force to oxygen than a bonding force of the second conductive material to oxygen. ### Claim 14 (depends on 12) The semiconductor device as claimed in claim 12, wherein: the second conductive material includes Cu, and the second bonding enhancement material includes Mn. ### Claim 15 (depends on 12) The semiconductor device as claimed in claim 12, wherein the second bonding enhancement layer includes an oxide of the second bonding enhancement material, a silicate of the second bonding enhancement material, or a combination thereof. ### Claim 16 (depends on 12) The semiconductor device as claimed in claim 12, wherein the second bonding enhancement layer includes MnSiO, MnO, CuMnO, CuMnSiO, or a combination thereof. ### Claim 17 A semiconductor device, comprising: a first substrate; a first structure on the first substrate, the first structure including a first dielectric layer and a first conductive pattern in the first dielectric layer, the first conductive pattern including a first conductive material and a first bonding enhancement material; a second substrate on the first structure; a second structure between the first structure and the second substrate, the second structure including a second dielectric layer and a second conductive pattern in the second dielectric layer, the second dielectric layer directly contacting the first dielectric layer thereunder, the second conductive pattern directly contacting the first conductive pattern thereunder, and the second conductive pattern including a second conductive material and a second bonding enhancement material; a first bonding enhancement layer between the first conductive pattern and the second dielectric layer; and a second bonding enhancement layer between the second conductive pattern and the first dielectric layer, wherein: a bottom surface of at least one of the first bonding enhancement layer or the second bonding enhancement layer is at a lower level than an interface between the first dielectric layer and the second dielectric layer, a top surface of the at least one of the first bonding enhancement layer or the second bonding enhancement layer is at a higher level than the interface between the first dielectric layer and the second dielectric layer, the first bonding enhancement layer includes the first bonding enhancement material or a material included in the second dielectric layer, the second bonding enhancement layer includes the second bonding enhancement material or a material included in the first dielectric layer, the first bonding enhancement material includes a material having a higher bonding force to the material included in the second dielectric layer than a bonding force of the first conductive material to the material included in the second dielectric layer, and the second bonding enhancement material includes a material having a higher bonding force to the material included in the first dielectric layer than a bonding force of the second conductive material to the material included in the first dielectric layer. ### Claim 18 A semiconductor device, comprising: a first substrate; a first structure on the first substrate, the first structure including a first dielectric layer and a first shielding pattern in the first dielectric layer, the first shielding pattern including a first conductive material and a first bonding enhancement material; a second substrate on the first structure; a plurality of photodiodes in the second substrate; a second structure between the first structure and the second substrate, the second structure including a second dielectric layer and a second shielding pattern in the second dielectric layer, the second dielectric layer directly contacting the first dielectric layer thereunder, the second shielding pattern directly contacting the first shielding pattern thereunder, and the second shielding pattern including a second conductive material and a second bonding enhancement material; a first bonding enhancement layer between the first shielding pattern and the second dielectric layer; and a second bonding enhancement layer between the second shielding pattern and the first dielectric layer, wherein: a bottom surface of at least one of the first bonding enhancement layer or the second bonding enhancement layer is at a lower level than an interface between the first dielectric layer and the second dielectric layer, a top surface of the at least one of the first bonding enhancement layer or the second bonding enhancement layer is at a higher level than the interface between the first dielectric layer and the second dielectric layer, the first bonding enhancement layer includes the first bonding enhancement material or a material included in the second dielectric layer, the second bonding enhancement layer includes the second bonding enhancement material or a material included in the first dielectric layer, the first bonding enhancement material includes a material having a higher bonding force to the material included in the second dielectric layer than a bonding force of the first conductive material to the material included in the second dielectric layer, and the second bonding enhancement material includes a material having a higher bonding force to the material included in the first dielectric layer than a bonding force of the second conductive material to the material included in the first dielectric layer. ### Claim 19 (depends on 18) The semiconductor device as claimed in claim 18, further comprising: a plurality of color filters on the plurality of photodiodes; and a plurality of microlenses on the plurality of color filters.