Semiconductor structure and manufacturing method thereof

A structure, comprising:

• a redistribution structure comprising dielectric layers and conductive layers alternately stacked, wherein a dielectric layer among the dielectric layers of the redistribution structure comprises a first surface, a conductive layer among the conductive layers of the redistribution structure comprises a second surface, and the conductive layer comprises a wiring layer and a seed layer;
• an under-bump metallization (UBM) layer;
• an adhesive layer disposed between the UBM layer and the dielectric layer, wherein a portion of the seed layer penetrates through the adhesive layer and extends partially into the UBM layer.

A structure, comprising:

• a redistribution structure comprising dielectric layers and conductive layers alternately stacked, wherein a conductive layer among the conductive layers comprises a wiring layer and a seed layer;
• an under-bump metallization (UBM) layer, wherein a first portion of the seed layer is embedded in the UBM layer, and the wiring layer is spaced apart from the UBM layer by the first portion of the seed layer, and the first portion of the seed layer is in contact with the UBM layer as well as the wiring layer, and
• an adhesive layer disposed between the UBM layer and a dielectric layer among the dielectric layers.