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US 12,593,704 B2Granted
Three-dimensional semiconductor device and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJeng-An Wang, Sheng-Chi Lin, Hao-Cheng Hou, Tsung-Ding Wang, Chien-Hsun Lee
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Abstract
Embodiments provide a method of performing a carrier switch for a device wafer, attaching a second wafer and removing a first wafer. A buffer layer is deposited over the device wafer, buffer layer reducing the topography of the surface of the device wafer. After the carrier switch a film-on-wire layer is removed from the buffer layer and then the buffer layer is at least in part removed.
Claims20
A method comprising:
- forming a first package component, comprising:
- forming a first interconnect over a first carrier,
- forming electrical connectors over the first interconnect,
- depositing a buffer layer over the electrical connectors, the buffer layer burying the electrical connectors, wherein the buffer layer is comprised of a first material, wherein an upper dielectric layer of the first interconnect is comprised of a second material, wherein the second material is different from the first material,
- attaching a second carrier to the buffer layer, and
- removing the first carrier;
- attaching a chip to a side of the first interconnect opposite the buffer layer;
- laterally encapsulating the chip in an encapsulant;
- debonding the second carrier;
- removing at least a first portion of the buffer layer to expose the electrical connectors;
- and
- singulating a first package device from the first package component, the first package component including the chip.
9 more elements
A method comprising:
- attaching a first die to a first carrier;
- forming a metal pillar on the first carrier;
- encapsulating the first die and metal pillar in a first encapsulant;
- forming a first redistribution structure over the first encapsulant;
- forming first connectors over the first redistribution structure, wherein following forming the first connectors, an upper surface of the first redistribution structure together with the first connectors has a first average topography;
- forming a buffer layer over the first redistribution structure and the first connectors, an upper surface of the buffer layer having a second average topography, the second average topography being less than half of the first average topography;
- disposing an epoxy film on the buffer layer;
- performing a carrier switch process to a second carrier, wherein the epoxy film is between the second carrier and the buffer layer;
- and
- attaching a second die on a side of the first encapsulant opposite the first redistribution structure.
7 more elements
A method comprising:
- forming first connectors over a first structure, wherein after forming the first connectors, an upper surface of the first structure together with the first connectors has a first average topography;
- forming a buffer layer over the first structure and the first connectors, an upper surface of the buffer layer having a second average topography, the second average topography being less than half of the first average topography, wherein the buffer layer completely covers the first connectors;
- attaching a carrier to the buffer layer, wherein the buffer layer completely covers the first connectors after attaching the carrier;
- removing the carrier to expose the buffer layer;
- and
- after removing the carrier, removing at least a portion of the buffer layer to expose the first connectors.
3 more elements
Dependencies are inferred from the claim text.